Researcher profile

J. W. Haus

J. W. Haus contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Harmonic Generation in Multi-Resonant Plasma Films

We investigate second and third harmonic generation in a slab of material that displays plasma resonances at the pump and its harmonic frequencies. Near-zero refractive indices and local field enhancement can deplete the pump for kW/cm2 incident powers, without resorting to other resonant photonic mechanisms. We show that low-threshold, highly-efficient nonlinear processes are possible in the presence of losses and phase-mismatch in structures that are 104 times shorter than typical KDP or LiNbO3 crystals, for relatively low irradiance values.

preprint2013arXiv

Spontaneous and Stimulated Raman Scattering near Metal Nanostructures in the Ultrafast, High-Intensity regime

The inclusion of atomic inversion in Raman scattering can significantly alter field dynamics in plasmonic settings. Our calculations show that large local fields and femtosecond pulses combine to yield: (i) population inversion within hot spots; (ii) gain saturation; and (iii) conversion efficiencies characterized by a switch-like transition to the stimulated regime that spans twelve orders of magnitude. While in Raman scattering atomic inversion is usually neglected, we demonstrate that in some circumstances full accounting of the dynamics of the Bloch vector is required.

preprint2012arXiv

Raman Scattering near Metal Nanostructures

We study Raman scattering in active media placed in proximity of different types of metal nanostructures, at wavelengths that display either Fabry-Perot or plasmonic resonances, or a combination of both. We use a semi-classical approach to derive equations of motion for Stokes and anti-Stokes fields that arise from quantum fluctuations. Our calculations suggest that local field enhancement yields Stokes and anti-Stokes conversion efficiencies between five and seven orders of magnitudes larger compared to cases without the metal nanostructure. We also show that to first order in the linear susceptibility the local field correction induces a dynamic, intensity-dependent frequency detuning that at high intensities tends to quench Raman gain.

preprint2011arXiv

A Dynamical Model of Harmonic Generation in Centrosymmetric Semiconductors

We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of the Lorentz force, and quadrupolar contributions that impart peculiar features to the angular dependence of the generated signals, in analogy to what occurs in metals. The material is assumed to have a non-zero, third order nonlinearity that gives rise to most of the third harmonic signal. Using the parameters of bulk Silicon we predict that cavity environments can significantly modify second harmonic generation (390nm) with dramatic improvements for third harmonic generation (266nm). This occurs despite the fact that the harmonics may be tuned to a wavelength range where the dielectric function of the material is negative: a phase locking mechanism binds the pump to the generated signals and inhibits their absorption. These results point the way to novel uses and flexibility of materials like Silicon as nonlinear media in the visible and UV ranges.