Source author record

J. W. Cai

J. W. Cai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

Current-induced magnetization switching in CoTb amorphous single layer

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.

preprint2012arXiv

Unconventional Scaling of the Anomalous Hall Effect Accompanying Electron Localization Correction in the Dirty Regime

Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σ_AH \propto σ^1.6_xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.

preprint2010arXiv

Renormalization of tensor-network states

We have discussed the tensor-network representation of classical statistical or interacting quantum lattice models, and given a comprehensive introduction to the numerical methods we recently proposed for studying the tensor-network states/models in two dimensions. A second renormalization scheme is introduced to take into account the environment contribution in the calculation of the partition function of classical tensor network models or the expectation values of quantum tensor network states. It improves significantly the accuracy of the coarse grained tensor renormalization group method. In the study of the quantum tensor-network states, we point out that the renormalization effect of the environment can be efficiently and accurately described by the bond vector. This, combined with the imaginary time evolution of the wavefunction, provides an accurate projection method to determine the tensor-network wavfunction. It reduces significantly the truncation error and enable a tensor-network state with a large bond dimension, which is difficult to be accessed by other methods, to be accurately determined.