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Researcher profile

J. W. Brill

J. W. Brill contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-concond-mat.mes-hallcond-mat.soft

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Published work

15 published item(s)

preprint2016arXiv

Investigations of metastable Ca2IrO4 epitaxial thin-films: systematic comparison with Sr2IrO4 and Ba2IrO4

We have synthesized thermodynamically metastable Ca2IrO4 thin-films on YAlO3 (110) substrates by pulsed laser deposition. The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragonal structure. Transport and optical spectroscopy measurements indicate that the electronic structure of the Ca2IrO4 thin-films is similar to that of Jeff = 1/2 spin-orbit-coupled Mott insulator Sr2IrO4 and Ba2IrO4, with the exception of an increased gap energy. The gap increase is to be expected in Ca2IrO4 due to its increased octahedral rotation and tilting, which results in enhanced electron-correlation, U/W. Our results suggest that the epitaxial stabilization growth of metastable-phase thin-films can be used effectively for investigating layered iridates and various complex-oxide systems.

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preprint2016arXiv

Thermal Resistances of Thin-Films of Small Molecule Organic Semiconductors

We have measured the thermal resistances of thin films of the small molecule organic semiconductors bis(triisopropylsilylethynyl) pentacene (TIPS-pn), bis(triethylsilylethynyl) anthradithiophene (TES-ADT) and difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT). For each material, several films of different thicknesses have been measured to separate the effects of intrinsic thermal conductivity from interface thermal resistance. For non-crystalline films of all three materials, with thicknesses ranging from < 100 nm to > 4 microns, the thermal conductivities are similar to that of polymers and over an order of magnitude smaller than that of the crystals, reflecting the large reduction in phonon mean-free path in the films. Thin (< 205 nm) crystalline films of TES-ADT, prepared by vapor-annealing spin-cast films, have also been measured, but for these the thermal resistances are dominated by interface scattering.

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preprint2015arXiv

Frequency-Dependent Photothermal Measurement of Transverse Thermal Diffusivity of Organic Semiconductors

We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn) and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side-groups, carry most of the heat.

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preprint2014arXiv

Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films

We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and the d\r{ho}/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively-strained thin films. Transport measurements under magnetic fields show negative magneto-resistance at low temperature for compressively-strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films.

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preprint2014arXiv

Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

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preprint2014arXiv

Thermal Diffusivities of Functionalized Pentacene Semiconductors

We have measured the interlayer and in-plane (needle axis) thermal diffusivities of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn). The needle axis value is comparable to the phonon thermal conductivities of quasi-one dimensional organic metals with excellent pi-orbital overlap, and its value suggests that a significant fraction of heat is carried by optical phonons. Furthermore, the interlayer (c-axis) thermal diffusivity is at least an order of magnitude larger, and this unusual anisotropy implies very strong dispersion of optical modes in the interlayer direction, presumably due to interactions between the silyl-containing side groups. Similar values for both in-plane and interlayer diffusivities have been observed for several other functionalized pentacene semiconductors with related structures.

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preprint2013arXiv

Anisotropic electronic properties of a-axis-oriented Sr2IrO4 epitaxial thin-films

We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that of the ab-plane. Optical absorption spectra with E//b polarization show both Ir 5d intersite transitions and charge-transfer transitions (O 2p to Ir 5d), while E//c spectra show only the latter. The structural anisotropy created by biaxial strain in a-axis-oriented thin-films also changes the electronic structure and gap energy. These a-axis-oriented, epitaxial thin-films provide a powerful tool to investigate the highly anisotropic electronic properties of Sr2IrO4.

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preprint2013arXiv

Interlayer Thermal Conductivity of Rubrene Measured by ac-Calorimetry

We have measured the interlayer thermal conductivity of crystals of the organic semiconductor rubrene, using ac-calorimetry. Since ac-calorimetry is most commonly used for measurements of the heat capacity, we include a discussion of its extension for measurements of the transverse thermal conductivity of thin crystals of poor thermal conductors, including the limitations of the technique. For rubrene, we find that the interlayer thermal conductivity, 0.7 mW/cm K, is several times smaller than the (previously measured) in-layer value, but its temperature dependence indicates that the interlayer mean free path is at least a few layers.

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preprint2013arXiv

Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.

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preprint2012arXiv

Dynamics of Charge Flow in the Channel of a Thin-Film Field-Effect Transistor

The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of &#34;zero applied current&#34;: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.

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preprint2011arXiv

Torque and temperature dependence of the hysteretic voltage-induced torsional strain in tantalum trisulfide

We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in crystals of orthorhombic tantalum trisulfide on temperature and applied torque. In particular, applying square-wave voltages above the charge-density-wave (CDW) threshold voltage, so as to abruptly switch the strain across its hysteresis loop, we have found that the time constant for the VITS to switch (at different temperatures and voltages) varied as the CDW current. Application of torque to the crystal could also change the VITS time constant, magnitude, and sign, suggesting that the VITS is a consequence of residual torsional strain in the sample which twist the CDW. Application of voltage changes the pitch of these CDW twists, which then act back on the lattice. However, it remains difficult to understand the sluggishness of the response.

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preprint2010arXiv

Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide

We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 seconds. The square-wave response shows that the dynamic response to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.

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preprint2010arXiv

Electro-optic measurement of carrier mobility in an organic thin-film transistor

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.

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preprint2009arXiv

Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning

We have studied the frequency and voltage dependence of voltage-induced torsional strains in orthorhombic TaS3 [V. Ya. Pokrovskii, et al, Phys. Rev. Lett. 98, 206404 (2007)] by measuring the modulation of the resonant frequency of an RF cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance and resistance, suggesting that the strain is associated with polarization of the CDW rather than CDW current. Measurements with square-wave voltages show that the strain is very sluggish, not even reaching its dc value at a frequency of 0.1 Hz, but the dynamics appear to be very sample dependent. By applying oscillating torque while biasing the sample with a dc current, we have also looked for strain induced voltage in the sample; none is observed at the low biases where the voltage-induced strains first occur, but an induced voltage is observed at higher biases, probably associated with strain-dependent CDW conductance.

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preprint2006arXiv

Specific Heat of (Ca1-xSrx)3Ru2O7 Single Crystals

We have measured the specific heat of crystals of (Ca1-xSrx)3Ru2O7 using ac- and relaxation-time calorimetry. Special emphasis was placed on the characterization of the Neel (TN=56 K) and structural (Tc = 48 K) phase transitions in the pure, x=0 material. While the latter is believed to be first order, detailed measurements under different experimental conditions suggest that all the latent heat (with L ~ 0.3 R) is being captured in a broadened peak in the effective heat capacity. The specific heat has a mean-field-like step at TN, but its magntitude (Delta cP ~ R) is too large to be associated with a conventional itinerant electron (e.g. spin-density-wave) antiferromagnetic transition, while its entropy is too small to be associated with full ordering of localized spins. The TN transition broadens with Sr substitution while its magnitude decreases slowly. On the other hand, the entropy change associated with the Tc transition decreases rapidly with Sr substitution and is not observable for our x=0.58 sample.

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