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J. Vucicevic

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cond-mat.str-el cond-mat.mes-hall cond-mat.supr-con

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preprint2020arXiv

Charge transport in the Hubbard model at high temperatures: triangular versus square lattice

High-temperature bad-metal transport has been recently studied both theoretically and in experiments as one of the key signatures of strong electronic correlations. Here we use the dynamical mean field theory (DMFT) and its cluster extensions, as well as the finite-temperature Lanczos method (FTLM) to explore the influence of lattice frustration on the thermodynamic and transport properties of the Hubbard model at high temperatures. We consider the triangular and the square lattice at half-filling and at 15\% hole-doping. We find that for $T \gtrsim 1.5t$ the self-energy becomes practically local, while the finite-size effects become small at lattice-size $4 \times 4$ for both lattice types and doping levels. The vertex corrections to optical conductivity, which are significant on the square lattice even at high temperatures, contribute less on the triangular lattice. We find approximately linear temperature dependence of dc resistivity in doped Mott insulator for both types of lattices.

preprint2015arXiv

Anderson localization effects near the Mott metal-insulator transition

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar as in the clean case. However, as we increase disorder Anderson localization effects are responsible for shrinking the coexistence region and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

preprint2015arXiv

Bad-metal behavior reveals Mott quantum criticality in doped Hubbard models

Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through Dynamical Mean-Field Theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transition are confined to extremely low temperatures, while clear signatures of Mott quantum criticality emerge across much of the phase diagram. Remarkable scaling behavior is identified for the entire family of resistivity curves, with a quantum critical region covering the entire BM regime, providing not only insight, but also quantitative understanding around the MIR limit, in agreement with the available experiments.

preprint2013arXiv

Finite temperature crossovers and the quantum Widom line near the Mott transition

The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span those regions, which we explore in quantitative detail within the framework of dynamical mean-field theory. Most significantly, the high temperature crossover between the bad metal and Mott-insulator regimes displays a number of phenomena marking the gradual development of the Mott insulating state. We discuss the quantum critical scaling behavior found in this regime, and propose methods to facilitate its possible experimental observation. We also introduce the concept of {\em quantum Widom lines} and present a detailed discussion that highlights its physical meaning when used in the context of quantum phase transitions.

preprint2012arXiv

d-wave superconductivity on the honeycomb bilayer

We introduce a microscopic model on the honeycomb bilayer, which in the small-momentum limit captures the usual (quadratic dispersion in kinetic term) description of bilayer graphene. In the limit of strong interlayer hopping it reduces to an effective honeycomb monolayer model with also third neighbor hopping. We study interaction effects in this effective model focusing on possible superconducting instabilities. We find d_{x^2-y^2} superconductivity in the strong coupling limit of an effective tJ-model-like description that gradually transforms into d + id time-reversal symmetry breaking superconductivity at weak couplings. In this limit the small momentum order parameter expansion is (k_x + i k_y)^2 [or (k_x - ik_y)^2] in both valleys of the effective low-energy description. The relevance of our model and investigation for the physics of bilayer graphene is also discussed.

preprint2011arXiv

Quantum Critical Transport Near the Mott Transition

We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form $ρ(δU,T)=ρ_{c}(T)f(T/T_{o}(δU))$, with $T_{o}(δU)\simδU^{zν}$, and $ρ_{c}(T)\sim T$. The corresponding $β$-function displays a "strong coupling" form $β\sim\ln(ρ_{c}/ρ)$, reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.