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J. S. Smith

J. S. Smith appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.str-elcond-mat.supr-conquant-ph

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Published work

8 published item(s)

preprint2021arXiv

Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires

Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process. We use a combination of experimental and computational approaches to investigate the role of grain morphology and distribution in granular aluminium thin films, when formed into nanowire constrictions. Treating the granular aluminium film as a network of randomly distributed resistors with parameters motivated by the film microstructure allows us to model the electrical characteristics of the nanowires. This model provides estimates of the dependence of sheet resistance on grain size and distribution, and the resulting device to device variation for superconducting nanowires. By fabricating a series of different length nanowires, we study the electromigration process as a function of applied current, and then compare directly to the results of our computational model. In doing so we show that the electromigration is driven by the formation of quantum point contacts between metallic aluminium grains.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pressure-induced suppression of ferromagnetism in the itinerant ferromagnet LaCrSb$_3$

We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb$_3$. The ferromagnetic phase (T$_C$ = 120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr-moment decreases steadily with increasing pressure. The unit cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are in good agreement with theoretical predictions, but the Cr-moment decreases smoothly with pressure, in contrast to steplike drops predicted by theory. The ferromagnetic ordering temperature appears to be driven by the Cr-moment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Simulating the fabrication of aluminium oxide tunnel junctions

Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility and reliability of qubits have been made possible through new circuit designs, there are still knowledge gaps in the relevant materials science. A better understanding of how fabrication conditions affect the density, uniformity, and elemental composition of the oxide barrier may lead to the development of lower noise and more reliable nanoelectronics and quantum computers. In this paper we use molecular dynamics to develop models of Al-AlO$_\mathrm{x}$-Al junctions by iteratively growing the structures with sequential calculations. With this approach we can see how the surface oxide grows and changes during the oxidation simulation. Dynamic processes such as the evolution of a charge gradient across the oxide, the formation of holes in the oxide layer, and changes between amorphous and semi-crystalline phases are observed. Our results are widely in agreement with previous work including reported oxide densities, self-limiting of the oxidation, and increased crystallinity as the simulation temperature is raised. The encapsulation of the oxide with metal evaporation is also studied atom by atom. Low density regions at the metal-oxide interfaces are a common feature in the final junction structures which persists for different oxidation parameters, empirical potentials, and crystal orientations of the aluminium substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valence instability across magnetostructural transition in USb$_2$

We have performed pressure dependent X-ray diffraction and resonant X-ray emission spectroscopy experiments on USb$_2$ to further characterize the AFM-FM transition occurring near 8 GPa. We have found the magnetic transition coincides with a tetragonal to orthorhombic transition resulting in a 17% volume collapse as well as a transient $\textit{f}$-occupation enhancement. Compared to UAs$_2$ and UAsS, USb$_2$ shows a reduced bulk modulus and transition pressure and an increased volume collapse at the structural transition. Except for an enhancement across the transition region, the $\textit{f}$-occupancy decreases steadily from 1.96 to 1.75.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Does the boson peak survive in an ultrathin oxide glass?

Bulk glasses exhibit extra vibrational modes at low energies, known as the boson peak. The microscopic dynamics in nanoscale alumina impact the performance of qubits and other superconducting devices, however the existence of the boson peak in these glasses has not been previously measured. Here we report neutron spectroscopy on Al/Al$_2$O$_{3-x}$ nanoparticles consisting of spherical metallic cores from 20 to 1000 nm surrounded by a 3.5 nm thick alumina glass. An intense low-energy peak is observed at $ω_{BP}$ = 2.8 $\pm$ 0.6 meV for highly oxidised particles, concurrent with an excess in the density of states. The intensity of the peak scales inversely with particle size and oxide fraction indicating a surface origin, and is red-shifted by 3 meV with respect to the van-Hove singularity of $γ$-phase Al$_2$O$_{3-x}$ nanocrystals. Molecular dynamics simulations of $α$-Al$_2$O$_{3-x}$, $γ$-Al$_2$O$_{3-x}$ and a-Al$_2$O$_{3-x}$ show that the observed boson peak is a signature of the ultrathin glass surface, and the frequency is softened compared to that of the hypothetical bulk glass.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the non-equilibrium Green's function formalism. Increasing the oxide density is found to produce an exponential increase in the junction resistance. In highly oxygen-deficient junctions we observe metallic channels which decrease the resistance significantly. Computing the charge and current density within the junction shows how variation in the local potential landscape can create channels which dominate conduction. An atomistic approach provides a better understanding of these transport processes and guides the design of junctions for nanoelectronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to an atomic s orbital, with an effective Bohr radius of 1.8 nm. The corresponding binding energy of this state is found to be 41 meV, which is in good agreement with the currently accepted value of 45.59 meV. We also calculate the energies of the excited 1s(T) and 1s(E) states, finding them to be 32 and 31 meV respectively. These results constitute the first ab initio confirmation of the s manifold energy levels for phosphorus donors in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic transport in Si:P delta-doped wires

Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm.

0 citations0 reviewsNo code linkedOpen access