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Researcher profile

J. S. Clarke

J. S. Clarke contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

6 published item(s)

preprint2022arXiv

A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17~V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1~mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Qubits made by advanced semiconductor manufacturing

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-fidelity two-qubit gates in silicon above one Kelvin

Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal quantum logic in hot silicon qubits

Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information.

0 citations0 reviewsNo code linkedOpen access