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J. Rittmann

J. Rittmann contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Ultrafast x-ray diffraction of a ferroelectric soft mode driven by broadband terahertz pulses

Intense, few-cycle pulses in the terahertz frequency range have strong potential for schemes of control over vibrational modes in solid-state materials in the electronic ground-state. Here we report an experiment using single cycle terahertz pulses to directly excite lattice vibrations in the ferroelectric material $\mathrm{Sn_2P_2S_6}$ and ultrafast x-ray diffraction to quantify the resulting structural dynamics. A model of a damped harmonic oscillator driven by the transient electric field of the terahertz pulses describes well the movement of the Sn$^{2+}$ ion along the ferroelectric soft mode. Finally, we describe an anharmonic extension of this model which predicts coherent switching of domains at peak THz-frequency fields of 790 kV/cm.

preprint2014arXiv

Ultrafast structural dynamics of the Fe-pnictide parent compound BaFe2As2

Using femtosecond time-resolved x-ray diffraction we investigate the structural dynamics of the coherently excited A1g phonon mode in the Fe-pnictide parent compound BaFe2As2. The fluence dependent intensity oscillations of two specific Bragg reflections with distinctly different sensitivity to the pnictogen height in the compound allow us to quantify the coherent modifications of the Fe-As tetrahedra, indicating a transient increase of the Fe magnetic moments. By a comparison with time-resolved photoemission data we derive the electron-phonon deformation potential for this particular mode. The value of Delta mu/Delta z = -(1.0 - 1.5) eV/A is comparable with theoretical predictions and demonstrates the importance of this degree of freedom for the electron-phonon coupling in the Fe pnictides.

preprint2013arXiv

Coordination-driven magnetic-to-nonmagnetic transition in manganese doped silicon clusters

The interaction of a single manganese impurity with silicon is analyzed in a combined experimental and theoretical study of the electronic, magnetic, and structural properties of manganese-doped silicon clusters. The structural transition from exohedral to endohedral doping coincides with a quenching of high-spin states. For all geometric structures investigated, we find a similar dependence of the magnetic moment on the manganese coordination number and nearest neighbor distance. This observation can be generalized to manganese point defects in bulk silicon, whose magnetic moments fall within the observed magnetic-to-nonmagnetic transition, and which therefore react very sensitively to changes in the local geometry. The results indicate that high spin states in manganese-doped silicon could be stabilized by an appropriate lattice expansion.