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J. R. Anderson

J. R. Anderson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mes-hallcond-mat.mtrl-sciphysics.ins-detquant-ph

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Published work

9 published item(s)

preprint2015arXiv

Microwave photon-assisted phase-incoherent Cooper-pair tunneling in a Josephson STM

We have observed photon-assisted Cooper-pair tunneling in an atomic-scale Josephson junction formed between a superconducting Nb tip and a superconducting Nb sample in a scanning tunneling microscope (STM) at 30 mK. High-resolution tunneling spectroscopy data show a zero-bias conduction peak and other sharp sub-gap peaks from coupling of the STM junction to resonances in the electromagnetic environment. The sub-gap peaks respond to incident microwave radiation by splitting into multiple peaks with the position and height depending on the frequency and amplitude of the microwaves. The inter-peak spacing shows that the charge carriers are Cooper pairs, rather than quasiparticles, and the power dependence reveals that the current originates from photon-assisted phase-incoherent tunneling of pairs, rather than the more conventional phase-coherent tunneling of pairs that yields Shapiro steps.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Microwave Hall Effect

This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8 - 12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d. c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm2 /(V-sec).

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A 30 mK, 13.5 T scanning tunneling microscope with two independent tips

We describe the design, construction, and performance of an ultra-low temperature, high-field scanning tunneling microscope (STM) with two independent tips. The STM is mounted on a dilution refrigerator and operates at a base temperature of 30 mK with magnetic fields of up to 13.5 T. We focus on the design of the two-tip STM head, as well as the sample transfer mechanism, which allows \textit{in situ} transfer from an ultra high vacuum (UHV) preparation chamber while the STM is at 1.5 K. Other design details such as the vibration isolation and rf-filtered wiring are also described. Their effectiveness is demonstrated via spectral current noise characteristics and the root mean square roughness of atomic resolution images. The high-field capability is shown by the magnetic field dependence of the superconducting gap of $\text{Cu}_x\text{Bi}_2\text{Se}_3$. Finally, we present images and spectroscopy taken with superconducting Nb tips with the refrigerator at 35 mK that indicate that the effective temperature of our tips/sample is approximately 184 mK, corresponding to an energy resolution of 16 $μ$eV.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

We report a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 $μ$m diameter are dry etched in an SF$_6$ plasma in a Reactive Ion Etcher. The gas pressure, etching time and applied power are chosen to produce a self-sharpening effect to obtain the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, and generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi$_2$Se$_3$ at temperatures ranging from 30 mK to 9 K.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic Interactions in Ge/1-x/Cr/x/Te Semimagnetic Semiconductors

We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq 0.061. A spin-glass state (at T \leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x \geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atoms Talking to SQUIDs

We present a scheme to couple trapped $^{87}$Rb atoms to a superconducting flux qubit through a magnetic dipole transition. We plan to trap atoms on the evanescent wave outside an ultrathin fiber to bring the atoms to less than 10 $μ$m above the surface of the superconductor. This hybrid setup lends itself to probing sources of decoherence in superconducting qubits. Our current plan has the intermediate goal of coupling the atoms to a superconducting LC resonator.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multi-level Spectroscopy of Two-Level Systems Coupled to a dc SQUID Phase Qubit

We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite system to an excited state of the qubit or an excited state of one of the TLS states, we fit the location and spectral width to get the energy levels, splitting sizes and spectroscopic coherence times of the phase qubit and TLSs. The distribution of splittings is consistent with non-interacting individual charged ions tunneling between random locations in the tunnel barrier and the distribution of lifetimes is consistent with the AlOx in the junction barrier having a frequency-independent loss tangent. To check that the charge of each TLS couples independently to the voltage across the junction, we also measured the spectrum in the 20-22 GHz range and found tilted avoided level crossings due to the second excited state of the junction and states in which both the junction and a TLS were excited.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Comparison of coherence times in three dc SQUID phase qubits

We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times for the gradiometer varied from 4 ns to 8 ns, about the same as for the other devices (4 to 10 ns). The time constant for decay of Rabi oscillations was significantly longer in the single-turn Al device (20 to 30 ns) than either of the Nb devices (10 to 15 ns). These results imply that spatially uniform flux noise is not the main source of decoherence or inhomogenous broadening in these devices.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Strong-field effects in the Rabi oscillations of the superconducting phase qubit

Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-photon Rabi frequency, and two-photon Rabi frequency are compared to measurements made on a dc SQUID phase qubit with Nb/AlOx/Nb tunnel junctions. Good agreement is found between theory and experiment.

0 citations0 reviewsNo code linkedOpen access