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J. Okabayashi

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2 published item(s)

preprint2015arXiv

Electronic structure of Li$_{1+x}$[Mn$_{0.5}$Ni$_{0.5}$]$_{1-x}$O$_2$ studied by photoemission and x-ray absorption spectroscopy

We have studied the electronic structure of Li$_{1+x}$[Mn$_{0.5}$Ni$_{0.5}$]$_{1-x}$O$_2$ ($x$ = 0.00 and 0.05), one of the promising cathode materials for Li ion battery, by means of x-ray photoemission and absorption spectroscopy. The results show that the valences of Mn and Ni are basically 4+ and 2+, respectively. However, the Mn$^{3+}$ component in the $x$ = 0.00 sample gradually increases with the bulk sensitivity of the experiment, indicating that the Jahn-Teller active Mn$^{3+}$ ions are introduced in the bulk due to the site exchange between Li and Ni. The Mn$^{3+}$ component gets negligibly small in the $x$ = 0.05 sample, which indicates that the excess Li suppresses the site exchange and removes the Jahn-Teller active Mn$^{3+}$.

preprint2002arXiv

Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.