Researcher profile

J. Matsuno

J. Matsuno contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2016arXiv

Interface-driven topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayer

Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the Néel-type magnetic skyrmion, of which size is estimated to be $\sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.

preprint2016arXiv

Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This transition occurs when the spin-orbit-coupled $j_{\rm eff}$=1/2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the $Γ$(0,0,0)-R($π$,$π$,$π$) direction is found to play a crucial role in the metallic characteristics of SrIrO$_3$. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO$_3$ and $k_z$-dependent oscillations of photoelectron intensity in Sr$_3$Ir$_2$O$_7$. In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the $k$-resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed $k$-space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a non-realistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures.

preprint2015arXiv

Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators

The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism.

preprint2012arXiv

Two-dimensional Heisenberg behavior of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insulator Sr2IrO4

Dynamical correlations of Jeff = 1/2 isospins in the paramagnetic state of spin-orbital Mott insu- lator Sr2IrO4 was revealed by resonant magnetic x-ray diffuse scattering. We found two-dimensional antiferromagnetic fluctuation with a large in-plane correlation length exceeding 100 lattice spacings at even 20 K above the mangnetic ordering temperature. In marked contrast to the naive expecta- tion of strong magnetic anisotropy associated with an enhanced spin-orbit coupling, we discovered isotropic isospin correlation that is well described by the two-dimensional S = 1/2 quantum Heisen- berg model. The estimated antiferromagnetic coupling constant as large as J ~ 0.1 eV that is comparable to the small Mott gap (< 0.5 eV) points the weak and marginal Mott character of this spin-orbital entangled system.

preprint2009arXiv

Anomalous metallic state in the vicinity of Metal to Valence Bond Solid insulator transition in LiVS2

We investigate LiVS2 and LiVSe2 with a triangular lattice as itinerant analogues of LiVO2, known for the formation of valence bond solid (VBS) state out of S = 1 frustrated magnet. LiVS2, which is located at the border between a metal and a correlated insulator, shows a first ordered transition from a paramagnetic metal to a VBS insulator at Tc ~ 305 K upon cooling. The presence of VBS state in the close vicinity of insulator-metal transition may suggest the importance of itinerancy in the formation of VBS state. We argue that the high temperature metallic phase of LiVS2 has a pseudo-gap, likely originating from the VBS fluctuation. LiVSe2 was found to be a paramagnetic metal down to 2 K.

preprint2001arXiv

Chemical Potential Shift in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$: Contrasting Behaviors of the Electron- and Hole-Doped Cuprates

We have studied the chemical potential shift in the electron-doped superconductor Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ by precise measurements of core-level photoemission spectra. The result shows that the chemical potential monotonously increases with electron doping, quite differently from La$_{2-x}$Sr$_{x}$CuO$_{4}$, where the shift is suppressed in the underdoped region. If the suppression of the shift in La$_{2-x}$Sr$_{x}$CuO$_{4}$ is attributed to strong stripe fluctuations, the monotonous increase of the chemical potential is consistent with the absence of stripe fluctuations in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. The chemical potential jump between Nd$_{2}$CuO$_{4}$ and La$_{2}$CuO$_{4}$ is found to be much smaller than the optical band gaps.