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J. M. Maxson

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3 publications

preprint2022arXiv

Ab initio study of the crystal and electronic structure of mono- and bi-alkali antimonides: Stability, Goldschmidt-like tolerance factors, and optical properties

Mono- and bi-alkali antimonides, X2_2YSb (X and Y from Group I), are promising for next-generation electron emitters due to their capability of producing high-quality electron beams. However, these materials are not yet well understood, in part due to the technical challenges in growing pure, ordered alkali antimonides. For example, in the current literature there is a lack of complete understanding of the mechanically stable crystal structures of these materials. As a first step towards understanding this issue, this paper presents an ab initio study of stability of single-crystal mono- and bi-alkali antimonides in the D03D0_3 structure, the structure generally assumed in the literature for these materials. Finding that many of these materials actually are unstable in the D03D0_3 structure, we formulate a new set of Goldschmidt-like tolerance factors that accurately predict D03D0_3 stability using a procedure analogous to machine-learning perceptron-based analysis. Next, we consider possible stable structures for materials that we predict to be unstable in the D03D0_3 structure. Taking as examples the mono- and bi-alkali antimonides Cs3_3Sb and Cs2_2KSb, which also are technologically interesting for photoemission and photoabsorption applications, respectively, we note that the most unstable phonon displacements are consistent with the cubic structure, and we therefore perform extensive ab initio searches to identify potential ground-state structures in a cubic lattice. Our X-ray diffraction experiments confirm that indeed these two materials are not stable in the D03D0_3 structure and show scattering that is consistent with our new, proposed stable structures. Finally, we explore ab initio the implications of the breaking of the D03D0_3 symmetry on the electronic structure, showing significant impact on the location of the optical absorption edge.

preprint2022arXiv

Four-Dimensional Emittance Measurements of Ultrafast Electron Diffraction Optics Corrected Up to Sextupole Order

Ultrafast electron diffraction (UED) is a technique in which short-pulse electron beams can probe the femtosecond-scale evolution of atomic structure in matter driven far from equilibrium. As an accelerator physics challenge, UED imposes stringent constraints on the brightness of the probe electron beam. The low normalized emittance employed in UED, often at the 10 nm scale and below, is particularly sensitive to both applied field aberrations and space charge effects. The role of aberrations is increasingly important in small probe systems that often feature multiple orders of magnitude variations in beam size during transport. In this work, we report the correction of normal quadrupole, skew quadrupole, and sextupole aberrations via dedicated corrector elements in an ultrafast electron micro-diffraction beamline. To do this, we generate precise 4-dimensional phase space maps of rf-compressed electron beams, and find excellent agreement with aberration-free space charge simulations. Finally, we discuss the role a probe-forming aperture can play in improving the brightness of bunches with appreciable space charge effects.

preprint2021arXiv

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs3_3Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.

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