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J. -M. Hartmann

J. -M. Hartmann contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Molecular alignment echoes probe collision-induced rotational-speed changes

We show that the decays with pressure of the alignment echoes induced in N2O-He gas mixtures by two laser pulses with various delays bring detailed information on collision-induced changes of the rotational speed. Measurements and calculations demonstrate that collisions reduce the echo amplitude all the more efficiently when the echo appears late. We quantitatively explain this behavior by the filamentation of the classical rotational phase space induced by the first pulse and the progressive narrowing of the filaments with time. The variation of the echo decay thus reflects the ability of collisions to change the molecules' rotational speed by various amounts, enabling refined tests of models for the dissipation induced by intermolecular forces.

preprint2020arXiv

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.