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J. Levallois

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cond-mat.str-el cond-mat.supr-con cond-mat.mtrl-sci

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preprint2016arXiv

Temperature-dependent ellipsometry measurements of partial Coulomb energy in superconducting cuprates

We performed an experimental study of the temperature and doping dependence of the energy-loss function of the bilayer and trilayer Bi-cuprate family. The primary aim is to obtain information on the energy stored in the Coulomb interaction between the conduction electrons, on the temperature dependence thereof, and on the change of Coulomb interaction when Cooper-pairs are formed. We performed temperature-dependent ellipsometry measurements on several Bi$_2$Sr$_2$CaCu$_2$O$_{8-x}$ single crystals: under-doped with $T_c=60, 70$ and 83K, optimally doped with $T_c=91$K, overdoped with $T_c=84, 81, 70$ and $58$K, as well as optimally doped Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+x}$ with $T_c=110$K. Our first observation is that, as the temperature drops through $T_c$, the loss function in the range up to 2~eV displays a change of temperature dependence as compared to the temperature dependence in the normal state. This effect at - or close to - $T_c$ depends strongly on doping, with a sign-change for weak overdoping. The size of the observed change in Coulomb energy, using an extrapolation with reasonable assumptions about its $q$-dependence, is about the same size as the condensation energy that has been measured in these compounds. Our results therefore lend support to the notion that the Coulomb energy is an important factor for stabilizing the superconducting phase. Due to the restriction to small momentum, our observations do not exclude a possible significant contribution to the condensation energy of the Coulomb energy associated to the region of $q$ around $(π,π)$.

preprint2013arXiv

Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure

BiTeI is a giant Rashba spin splitting system, in which a non-centro symmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to $15$ GPa. The gap feature in the optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to at least $15$ GPa. The plasma edge, associated with intrinsically doped charge carriers, is smeared out through a phase transition at $9$ GPa. Using high pressure Raman spectroscopy, we follow the vibrational modes of BiTeI, providing additional clear evidence that the transition at 9 GPa involves a change of crystal structure. This change of crystal structure possibly inhibits the high-pressure topological phase from occurring.

preprint2011arXiv

Hybridization gap and anisotropic far-infrared optical conductivity of URu2Si2

We performed far-infrared optical spectroscopy measurements on the heavy fermion compound URu 2 Si 2 as a function of temperature. The light's electric-field was applied along the a-axis or the c-axis of the tetragonal structure. We show that in addition to a pronounced anisotropy, the optical conductivity exhibits for both axis a partial suppression of spectral weight around 12 meV and below 30 K. We attribute these observations to a change in the bandstructure below 30 K. However, since these changes have no noticeable impact on the entropy nor on the DC transport properties, we suggest that this is a crossover phenomenon rather than a thermodynamic phase transition.

preprint2011arXiv

Multi-component magneto-optical conductivity of multilayer graphene on SiC

Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers and (iii) a broad optical absorption background. Electron and hole type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than what is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.

preprint2010arXiv

Fermi-surface reconstruction and two-carrier model for the Hall effect in YBa2Cu4O8

Pulsed field measurements of the Hall resistivity and magnetoresistance of underdoped YBa2Cu4O8 are analyzed self-consistently using a simple model based on coexisting electron and hole carriers. The resultant mobilities and Hall numbers are found to vary markedly with temperature. The conductivity of the hole carriers drops by one order of magnitude below 30 K, explaining the absence of quantum oscillations from these particular pockets. Meanwhile the Hall coefficient of the electron carriers becomes strongly negative below 50 K. The overall quality of the fits not only provides strong evidence for Fermi-surface reconstruction in Y-based cuprates, it also strongly constrains the type of reconstruction that might be occurring.

preprint2007arXiv

Skutterudite Results Shed Light on Heavy Fermion Physics

Only few selected examples among the great diversity of anomalous rare earth skutterudite are reviewed. Focus is first given on PrFe4P12 in comparison with URu2Si2. For PrFe4P12, great progress has been made on determining the nature of the order parameter (OP). A non magnetic order parameter with a multipolar component emerges here while for URu2Si2 the nature of the so-called hidden order remains mysterious. The two systems have several similarities in their temperature--pressure (T, P) and magnetic field--temperature (H, T) phase diagrams, in their spin dynamics, in their nesting character and in their high sensitivity to impurities. Advances on one side must stimulate new views on the other. Besides general considerations on the choice of the OP, a simple basic problem is the treatment of the Kondo coupling in a system with low charge carrier number for the cases of uncompensated and compensated semi-metal. An interesting problem is also the possible decoupling between exciton modes and itinerant carriers.