Researcher profile

J. Krupka

J. Krupka contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Multi-mode technique for the determination of the biaxial Y2SiO5 permittivity tensor from 300 to 6 Kelvin

The Y2SiO5 (YSO) crystal is a dielectric material with biaxial anisotropy with known values of refractive index at optical frequencies. It is a well-known rare-earth (RE) host material for optical research and more recently has shown promising performance for quantum-engineered devices. In this paper, we report the first microwave characterization of the real permittivity tensor of a bulk YSO sample, as well as an investigation of the temperature dependence of the tensor components from 296 K down to 6 K. Estimated uncertainties were below 0.26%, limited by the precision of machining the cylindrical dielectric. Also, the electrical Q-factors of a few electromagnetic modes were recorded as a way to provide some information about the crystal losses over the temperature range. To solve the tensor components necessary for a biaxial crystal, we developed the multi-mode technique, which uses simultaneous measurement of low order Whispering Gallery Modes. Knowledge of the permittivity tensor offers important data, essential for the design of technologies involving YSO, such as microwave coupling to electron and hyperfine transitions in RE doped samples at low temperatures.

preprint2009arXiv

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.