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Researcher profile

J. Kong

J. Kong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallBiological Physics

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Published work

6 published item(s)

preprint2014arXiv

Trion induced negative photoconductivity in monolayer MoS2

Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2), a two-dimensional (2D) semiconductor, under femtosecond laser excitation. In particular, the conductivity is reduced dramatically down to only 30% of its equilibrium value with high pump fluence. This anomalous phenomenon arises from the strong many-body interactions in the system, where photoexcited electron-hole pairs join the doping-induced charges to form trions, bound states of two electrons and one hole. The resultant increase of the carrier effective mass substantially diminishes the carrier conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of suppressed terahertz absorption in photoexcited graphene

When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectroscopy in conjunction with optical pump excitation, we observe a reduced absorption of THz radiation in photoexcited graphene. The measured spectral shape of the differential optical conductivity exhibits non-Drude behavior. We discuss several possible mechanisms that contribute to the observed low-frequency non-equilibrium optical response of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q \not= 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q \not= 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q \not= 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene: A sub-nanometer trans-electrode membrane

Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge. Here, we show that when immersed in ionic solution, a layer of graphene takes on new electrochemical properties that make it a trans-electrode. The trans-electrode's properties are the consequence of the atomic scale proximity of its two opposing liquid-solid interfaces together with graphene's well known in-plane conductivity. We show that several trans-electrode properties are revealed by ionic conductivity measurements on a CVD grown graphene membrane that separates two aqueous ionic solutions. Despite this membrane being only one to two atomic layers thick, we find it is a remarkable ionic insulator with a very small stable conductivity that depends on the ion species in solution. Electrical measurements on graphene membranes in which a single nanopore has been drilled show that the membrane's effective insulating thickness is less than one nanometer. This small effective thickness makes graphene an ideal substrate for very high-resolution, high throughput nanopore based single molecule detectors. Sensors based on modulation of graphene's in-plane electronic conductivity in response to trans-electrode environments and voltage biases will provide new insights into atomic processes at the electrode surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Single Layer Behavior and Its Breakdown in Twisted Graphene Layers

We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single layer graphene, while for smaller angles we observe a slow-down of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist induced Van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of Van Hove singularities in twisted graphene layers

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.

0 citations0 reviewsNo code linkedOpen access