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J. Hänisch

J. Hänisch contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Inter- to Intra-Layer Resistivity Anisotropy of NdFeAs(O,H) with Various Hydrogen Concentrations

With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity anisotropy γ_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γ_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low γ_\{rho} value of 9 was observed with the mostly doped sample. The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of the phase diagram.

preprint2014arXiv

One-dimensional pinning behavior in Co-doped BaFe2As2 thin films

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.

preprint2013arXiv

The Effect of 45° Grain Boundaries and associated Fe particles on Jc and resistivity in Ba(Fe0.9Co0.1)2As2 Thin Films

The anisotropy of the critical current density Jc depends in general on both the properties of the flux lines (such as line tension, coherence length and penetration depth) and the properties of the defects (such as density, shape, orientation etc.). Whereas the Jc anisotropy in microstructurally clean films can be scaled to an effective magnetic field containing the Ginzburg-Landau anisotropy term, it is in general not possible (or only in a limited field range) for samples containing extended defects. Here, the Jc anisotropy of a Co-doped BaFe2As2 sample with 45° [001] tilt grain boundaries (GBs), i.e. grain boundaries created by 45° in-plane rotated grains, as well as extended Fe particles is investigated. This microstructure leads to c-axis correlated pinning, both due to the GBs and the Fe particles and manifests in a c-axis peak in the Jc anisotropy at low magnetic fields and a deviation from the anisotropic Ginzburg-Landau scaling at higher fields. Strong pinning at ellipsoidal extended defects, i.e. the Fe particles, is discussed, and the full Jc anisotropy is fitted successfully with the vortex path model. The results are compared to a sample without GBs and Fe particles. 45° GBs seem to be good pinning centers rather than detrimental to current flow.

preprint2012arXiv

Electronic phase diagram of disordered Co doped BaFe2As2

Superconducting and normal state transport properties in iron pnictides are sensitive to disorder and impurity scattering. By investigation of Ba(Fe1-xCox)2As2 thin films with varying Co concentration, we demonstrate that in the dirty limit the superconducting dome in the electronic phase diagram of Ba(Fe1-xCox)2As2 shifts towards lower doping concentrations, which differs significantly from observations in single crystals. We show that especially in the underdoped regime superconducting transition temperatures higher than 27 K are possible.

preprint2012arXiv

Non-thermal response of YBCO thin films to picosecond THz pulses

The photoresponse of YBa2Cu3O7-d thin film microbridges with thicknesses between 15 and 50 nm was studied in the optical and terahertz frequency range. The voltage transients in response to short radiation pulses were recorded in real time with a resolution of a few tens of picoseconds. The bridges were excited by either femtosecond pulses at a wavelength of 0.8 μm or broadband (0.1 - 1.5 THz) picosecond pulses of coherent synchrotron radiation. The transients in response to optical radiation are qualitatively well explained in the framework of the two-temperature model with a fast component in the picosecond range and a bolometric nanosecond component whose decay time depends on the film thickness. The transients in the THz regime showed no bolometric component and had amplitudes up to three orders of magnitude larger than the two-temperature model predicts. Additionally THz-field dependent transients in the absence of DC bias were observed. We attribute the response in the THz regime to a rearrangement of vortices caused by high-frequency currents.