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Researcher profile

E. Reich

E. Reich contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-con

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Published work

5 published item(s)

preprint2014arXiv

One-dimensional pinning behavior in Co-doped BaFe2As2 thin films

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction

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preprint2013arXiv

The Effect of 45° Grain Boundaries and associated Fe particles on Jc and resistivity in Ba(Fe0.9Co0.1)2As2 Thin Films

The anisotropy of the critical current density Jc depends in general on both the properties of the flux lines (such as line tension, coherence length and penetration depth) and the properties of the defects (such as density, shape, orientation etc.). Whereas the Jc anisotropy in microstructurally clean films can be scaled to an effective magnetic field containing the Ginzburg-Landau anisotropy term, it is in general not possible (or only in a limited field range) for samples containing extended defects. Here, the Jc anisotropy of a Co-doped BaFe2As2 sample with 45° [001] tilt grain boundaries (GBs), i.e. grain boundaries created by 45° in-plane rotated grains, as well as extended Fe particles is investigated. This microstructure leads to c-axis correlated pinning, both due to the GBs and the Fe particles and manifests in a c-axis peak in the Jc anisotropy at low magnetic fields and a deviation from the anisotropic Ginzburg-Landau scaling at higher fields. Strong pinning at ellipsoidal extended defects, i.e. the Fe particles, is discussed, and the full Jc anisotropy is fitted successfully with the vortex path model. The results are compared to a sample without GBs and Fe particles. 45° GBs seem to be good pinning centers rather than detrimental to current flow.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

LaFeAsO$_{1-x}$F$_{x}$ thin films: high upper critical fields and evidence of weak link behavior

High-quality superconducting LaFeAsO$_{1-x}$F$_{x}$ thin films were grown on single crystalline LaAlO$_{3}$ substrates with critical temperatures (onset) up to 28 K. Resistive measurements in high magnetic fields up to 40 T reveal a paramagnetically limited upper critical field, $μ_{0}H_{c2}$(0) around 77 T and a remarkable steep slope of -7.5 T/K near $T_{c}$. From transport measurements we observed a weak link behavior in low magnetic fields and the evidence for a broad reversible regime.

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preprint2009arXiv

Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.

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