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J. H. Smet

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cond-mat.mes-hall cond-mat.str-el

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preprint2016arXiv

Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States

In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations.

preprint2012arXiv

Current Induced Nuclear Spin Depolarization at Landau Level Filling Factor nu=1/2

Hyperfine interactions between electron and nuclear spins in the quantum Hall regime provide powerful means for manipulation and detection of nuclear spins. In this work we demonstrate that significant changes in nuclear spin polarization can be created by applying an electric current in a 2-dimensional electron system at Landau level filling factor nu=1/2. Electron spin transitions at nu= 2/3 and 1/2 are utilized for the measurement of the nuclear spin polarization. Consistent results are obtained from these two different methods of nuclear magnetometry. The finite thickness of the electron wavefunction is found to be important even for a narrow quantum well. The current induced effect on nuclear spins can be attributed to electron heating and the efficient coupling between the nuclear and electron spin systems at nu=1/2. The electron temperature, elevated by the current, can be measured with a thermometer based on the measurement of the nuclear spin relaxation rate. The nuclear spin polarization follows a Curie law dependence on the electron temperature. This work also allows us to evaluate the electron g-factor in high magnetic fields as well as the polarization mass of composite fermions.

preprint2012arXiv

How branching can change the conductance of ballistic semiconductor devices

We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential.

preprint2011arXiv

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.

preprint2009arXiv

The nature of localization in graphene under quantum Hall conditions

Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]. Here we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitude smaller [4,5,6,7,8,9,10]. We image the electronic density of states and the localized state spectrum of a graphene flake in the quantum Hall regime with a scanning single electron transistor [11]. Our microscopic approach provides direct insight into the nature of localization. Surprisingly, despite strong disorder, our findings indicate that localization in graphene is not dominated by single particle physics, but rather by a competition between the underlying disorder potential and the repulsive Coulomb interaction responsible for screening.

preprint2007arXiv

Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport measurements at high carrier densities indicate rather high mobilities, many questions pertaining to disorder remain unanswered. In particular, it has been argued theoretically, that when the average carrier density is zero, the inescapable presence of disorder will lead to electron and hole puddles with equal probability. In this work, we use a scanning single electron transistor to image the carrier density landscape of graphene in the vicinity of the neutrality point. Our results clearly show the electron-hole puddles expected theoretically. In addition, our measurement technique enables to determine locally the density of states in graphene. In contrast to previously studied massive two dimensional electron systems, the kinetic contribution to the density of states accounts quantitatively for the measured signal. Our results suggests that exchange and correlation effects are either weak or have canceling contributions.