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J. Gupta

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Published work

3 published item(s)

preprint2022arXiv

Biceph-Net: A robust and lightweight framework for the diagnosis of Alzheimer's disease using 2D-MRI scans and deep similarity learning

Alzheimer's Disease (AD) is a neurodegenerative disease that is one of the significant causes of death in the elderly population. Many deep learning techniques have been proposed to diagnose AD using Magnetic Resonance Imaging (MRI) scans. Predicting AD using 2D slices extracted from 3D MRI scans is challenging as the inter-slice information gets lost. To this end, we propose a novel and lightweight framework termed 'Biceph-Net' for AD diagnosis using 2D MRI scans that model both the intra-slice and inter-slice information. Biceph-Net has been experimentally shown to perform similar to other Spatio-temporal neural networks while being computationally more efficient. Biceph-Net is also superior in performance compared to vanilla 2D convolutional neural networks (CNN) for AD diagnosis using 2D MRI slices. Biceph-Net also has an inbuilt neighbourhood-based model interpretation feature that can be exploited to understand the classification decision taken by the network. Biceph-Net experimentally achieves a test accuracy of 100% in the classification of Cognitively Normal (CN) vs AD, 98.16% for Mild Cognitive Impairment (MCI) vs AD, and 97.80% for CN vs MCI vs AD.

preprint2005arXiv

The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.

preprint2005arXiv

The origin of switching noise in GaAs/AlGaAs lateral gated devices

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.