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J. Faist

J. Faist appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

10 published item(s)

preprint2020arXiv

Controlling and Phase-Locking a THz Quantum Cascade Laser Frequency Comb by Small Optical Frequency Tuning

Full phase control of THz emitting quantum cascade laser (QCL) combs has recently been demonstrated, opening new perspectives for even the most demanding applications. In this framework, simplifying the set-ups for control of these devices will help to accelerate their spreading in many fields. We report a new way to control the emission frequencies of a THz QCL comb by small optical frequency tuning (SOFT), using a very simple experimental setup, exploiting the incoherent emission of an ordinary white light emitting diode. The slightly perturbative regime accessible in these condition allows tweaking the complex refractive index of the semiconductor without destabilizing the broadband laser gain. The SOFT actuator is characterized and compared to another actuator, the QCL driving current. The suitability of this additional degree of freedom for frequency and phase stabilization of a THz QCL comb is shown and perspectives are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Accurate strain measurements in highly strained Ge microbridges

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Far-infrared quantum cascade lasers operating in AlAs phonon Reststrahlen band

We report on the operation of a double metal waveguide far-infrared quantum cascade laser emitting at 28 $μ$m, corresponding to the AlAs-like phonon Reststrahlen band. To avoid absorption by AlAs-like optical phonons, the Al-free group-V alloy GaAs$_{0.51}$Sb$_{0.49}$ is used as a barrier layer in the bound-to-continuum based active region. Lasing occurs at a wavelength of 28.3 $μ$m, which is the longest wavelength among the quantum cascade lasers operating from mid-infrared to far-infrared. The threshold current density at 50 K is 5.5 kA/cm$^{2}$ and maximum operation temperature is 175 K. We also discuss the feasibility that operation wavelength cover the whole spectral range bridging between mid-infrared and terahertz by choosing suited group III-V materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Uniaxially stressed germanium with fundamental direct band gap

We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Superconducting complementary metasurfaces for THz ultrastrong light-matter coupling

A superconducting metasurface operating in the THz range and based on the complementary metamaterial approach is discussed. Experimental measurements as a function of temperature and magnetic field display a modulation of the metasurface with a change in transmission amplitude and frequency of the resonant features. Such a metasurface is successively used as a resonator for a cavity quantum electrodynamic experiment displaying ultrastrong coupling to the cyclotron transition of a 2DEG. A finite element modeling is developed and its results are in good agreement with the experimental data. In this system a normalized coupling ratio of $\fracΩ{ω_c}=0.27$ is measured and a clear modulation of the polaritonic states as a function of the temperature is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum dot admittance probed at microwave frequencies with an on-chip resonator

We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The resonator frequency is found to shift both down and up close to conductance resonance of the dot corresponding to a change of sign of the reactance of the system from capacitive to inductive. The observations are consistent with a scattering matrix model. The sign of the reactance depends on the detuning of the dot from conductance resonance and on the magnitude of the tunnel rate to the lead with respect to the resonator frequency. Inductive response is observed on a conductance resonance, when tunnel coupling and temperature are sufficiently small compared to the resonator frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum dot occupation and electron dwell time in the cotunneling regime

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Room-temperature transverse-electric polarized intersubband electroluminescence from InAs/AlInAs quantum dashes

We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest lateral dimension of the dashes, as confirmed by its dependence on crystallographic orientation both in absorption measurements on a dedicated sample and from electroluminescence itself. From the absorption we estimate a dipole moment for the observed transition of <x>=1.7 nm. The electroluminescence is peaked at around 110 meV and increases with applied bias. Its temperature dependence shows a decrease at higher temperatures limited by optical phonon emission.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Coherent instabilities in a semiconductor laser with fast gain recovery

We report the observation of a coherent multimode instability in quantum cascade lasers (QCLs), which is driven by the same fundamental mechanism of Rabi oscillations as the elusive Risken-Nummedal-Graham-Haken (RNGH) instability predicted 40 years ago for ring lasers. The threshold of the observed instability is significantly lower than in the original RNGH instability, which we attribute to saturable-absorption nonlinearity in the laser. Coherent effects, which cannot be reproduced by standard laser rate equations, can play therefore a key role in the multimode dynamics of QCLs, and in lasers with fast gain recovery in general.

0 citations0 reviewsNo code linkedOpen access