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Researcher profile

J. Curiale

J. Curiale contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2003arXiv

Low temperature irreversibility induced by thermal cycles on two prototypical phase separated manganites

We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a decrease of the magnetization at different temperature ranges after cycling is obtained in the temperature range between 300 K and 30 K. Both compounds are known to exhibit intrinsic submicrometric coexistence of phases and undergo a sequence of phase transitions related to structural changes. Changes induced by thermal cycling can be partially inhibited by applying magnetic field and hydrostatic pressure. Our results suggest that the growth and coexistence of phases with different structures gives rise to microstructural tracks and strain accommodation, producing the observed irreversibility. Irrespective of the actual ground state of each compound, the effect of thermal cycling is towards an increase of the amount of the insulating phase in both compounds.

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preprint2002arXiv

Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$

We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist we observed a persistent memory of low magnetic fields ($<$ 1 T) which is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase separated nature of these manganese oxide based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this non-volatile memory has multilevel capability associated with different applied low magnetic field values.

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