Researcher profile

J. Brun-Picard

J. Brun-Picard contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Practical quantum realization of the ampere from the electron charge

One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Ampère's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within $10^{-8}$ in relative value and fulfilling traceability needs, is still missing despite many efforts have been spent for the development of single-electron tunneling devices. Starting again with Ohm's law, applied here in a quantum circuit combining the quantum Hall resistance and Josephson voltage standards with a superconducting cryogenic amplifier, we report on a practical and universal programmable quantum current generator. We demonstrate that currents generated in the milliampere range are quantized in terms of $ef_\mathrm{J}$ ($f_\mathrm{J}$ is the Josephson frequency) with a measurement uncertainty of $10^{-8}$. This new quantum current source, able to deliver such accurate currents down to the microampere range, can greatly improve the current measurement traceability, as demonstrated with the calibrations of digital ammeters. Beyond, it opens the way to further developments in metrology and in fundamental physics, such as a quantum multimeter or new accurate comparisons to single electron pumps.

preprint2015arXiv

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $μ$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Système International d'unités (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.