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J. Bowlan

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2020arXiv

Ultrafast spin density wave transition in Chromium governed by thermalized electron gas

The energy and momentum selectivity of time- and angle-resolved photoemission spectroscopy is exploited to address the ultrafast dynamics of the antiferromagnetic spin density wave (SDW) transition photoexcited in epitaxial thin films of chromium. We are able to quantitatively extract the evolution of the SDW order parameter $Δ$ through the ultrafast phase transition. $Δ$ is defined by the transient temperature of the thermalized electron gas. The complete destruction of SDW order on a sub-100~fs time scale is observed, much faster than for conventional charge density wave materials. Our results reveal that equilibrium concepts for phase transitions such as the order parameter may be utilized even in the strongly non-adiabatic regime of ultrafast photo-excitation.

preprint2016arXiv

Electric polarization observed in single crystals of multiferroic Lu2MnCoO6

We report electric polarization and magnetization measurements in single crystals of double perovskite Lu2MnCoO6 using pulsed magnetic fields and optical second harmonic generation (SHG) in DC magnetic fields. we observe well-resolved magnetic field-induced changes in the electric polarization in single crystals and thereby resolve the question about whether multiferroic behavior is intrinsic to these materials or an extrinsic feature of polycrystals. We find electric polarization along the crystalline b-axis, that is suppressed by applying a magnetic fields along c-axis and advance a model for the origin of magnetoelectric coupling. We furthermore map the phase diagram using both capacitance and electric polarization to identify regions of ordering and regions of magnetoelectric hysteresis. This compound is a rare example of coupled hysteretic behavior in the magnetic and electric properties. The ferromagnetic-like magnetic hysteresis loop that couples to hysteretic polarization can be attributed not to ordinary ferromagnetic domains, but to the rich physics of magnetic frustration of Ising-like spins in the axial next-nearest neighbor interaction model.

preprint2015arXiv

Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$

Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of $\sim$5-15 picoseconds, is attributed to phonon-assisted electron-hole recombination. As the temperature decreases from 300 K, the timescale governing this process increases due to the reduction of the phonon population. However, below $\sim$50 K, an unusual decrease of the recombination time sets in, most likely due to a change in the electronic structure that has been linked to the large magnetoresistance observed in this material.

preprint2014arXiv

Time-resolved terahertz dynamics in thin films of the topological insulator Bi$_{2}$Se$_3$

We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi$_2$Se$_3$ films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. These different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.