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J. Ahopelto

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Published work

3 published item(s)

preprint2020arXiv

High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers

A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems.

preprint2012arXiv

Lifetimes of Confined Acoustic Phonons in Ultra-Thin Silicon Membranes

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultra-thin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time of the first-order dilatational mode decreases significantly from \sim 4.7 ns to 5 ps with decreasing membrane thickness from \sim 194 to 8 nm. The experimental results are compared with theories considering both intrinsic phonon-phonon interactions and extrinsic surface roughness scattering including a wavelength-dependent specularity. Our results provide insight to understand some of the limits of nanomechanical resonators and thermal transport in nanostructures.

preprint2005arXiv

Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.