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Ivan S. Mukhin

Ivan S. Mukhin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.optics cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Fabrication of Hybrid Nanostructures via Nanoscale Laser-Induced Reshaping for Advanced Light Manipulation

Hybrid nanophotonics based on metal-dielectric nanostructures unifies the advantages of plasmonics and all-dielectric nanophotonics providing strong localization of light, magnetic optical response and specifically designed scattering properties. Here we demonstrate a novel approach for fabrication of ordered hybrid nanostructures via femtosecond laser melting of asymmetrical metal-dielectric (Au-Si) nanoparticles created by lithographical methods. The approach allows selective reshaping of the metal components of the hybrid nanoparticles without affecting dielectric ones. We apply the developed approach for tuning of the hybrid nanostructures scattering properties in the visible range. The experimental results are supported by molecular dynamics simulation and numerical solving of Maxwell equations.

preprint2016arXiv

Resonant Raman Scattering from Silicon Nanoparticles Enhanced by Magnetic Response

Enhancement of optical response with high-index dielectric nanoparticles is attributed to the excitation of their Mie-type magnetic and electric resonances. Here we study Raman scattering from crystalline silicon nanoparticles and reveal that magnetic dipole modes have much stronger effect on the scattering than electric modes of the same order. We demonstrate experimentally a 140-fold enhancement of Raman signal from individual silicon spherical nanoparticles at the magnetic dipole resonance. Our results confirm the importance of the optically-induced magnetic response of subwavelength dielectric nanoparticles for enhancing light-matter interactions.

preprint2015arXiv

Controllable Femtosecond Laser-Induced Dewetting for Plasmonic Applications

Dewetting of thin metal films is one of the most widespread method for functional plasmonic nanostructures fabrication. However, simple thermal-induced dewetting does not allow to control degree of nanostructures order without additional lithographic process steps. Here we propose a novel method for lithography-free and large-scale fabrication of plasmonic nanostructures via controllable femtosecond laser-induced dewetting. The method is based on femtosecond laser surface pattering of a thin film followed by a nanoscale hydrodynamical instability, which is found to be very controllable under specific irradiation conditions. We achieve control over degree of nanostructures order by changing laser irradiation parametrs and film thickness. This allowed us to exploit the method for the broad range of applications: resonant light absorbtion and scattering, sensing, and potential improving of thin-film solar cells.

preprint2015arXiv

Simple Method for Large-Scale Fabrication of Plasmonic Structures

A novel method for single-step, lithography-free, and large-scale laser writing of nanoparticle-based plasmonic structures has been developed. Changing energy of femtosecond laser pulses and thickness of irradiated gold film it is possible to vary diameter of the gold nanoparticles, while the distance between them can be varied by laser scanning parameters. This method has an advantage over the most previously demonstrated methods in its simplicity and versatility, while the quality of the structures is good enough for many applications. In particular, resonant light absorbtion/scattering and surface-enhanced Raman scattering have been demonstrated on the fabricated nanostructures.

preprint2012arXiv

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap.