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Ivan Peric

Ivan Peric contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

The Future of Gamma-Ray Experiments in the MeV-EeV Range

Gamma-rays, the most energetic photons, carry information from the far reaches of extragalactic space with minimal interaction or loss of information. They bring messages about particle acceleration in environments so extreme they cannot be reproduced on earth for a closer look. Gamma-ray astrophysics is so complementary with collider work that particle physicists and astroparticle physicists are often one in the same. Gamma-ray instruments, especially the Fermi Gamma-ray Space Telescope, have been pivotal in major multi-messenger discoveries over the past decade. There is presently a great deal of interest and scientific expertise available to push forward new technologies, to plan and build space- and ground-based gamma-ray facilities, and to build multi-messenger networks with gamma rays at their core. It is therefore concerning that before the community comes together for planning exercises again, much of that infrastructure could be lost to a lack of long-term planning for support of gamma-ray astrophysics. Gamma-rays with energies from the MeV to the EeV band are therefore central to multiwavelength and multi-messenger studies to everything from astroparticle physics with compact objects, to dark matter studies with diffuse large scale structure. These goals and new discoveries have generated a wave of new gamma-ray facility proposals and programs. This paper highlights new and proposed gamma-ray technologies and facilities that have each been designed to address specific needs in the measurement of extreme astrophysical sources that probe some of the most pressing questions in fundamental physics for the next decade. The proposed instrumentation would also address the priorities laid out in the recent Astro2020 Decadal Survey, a complementary study by the astrophysics community that provides opportunities also relevant to Snowmass.

preprint2021arXiv

AstroPix: Investigating the Potential of Silicon Pixel Sensors in the Future of Gamma-ray Astrophysics

This paper details preliminary photon measurements with the monolithic silicon detector ATLASPix, a pixel detector built and optimized for the CERN experiment ATLAS. The goal of this paper is to determine the promise of pixelated silicon in future space-based gamma-ray experiments. With this goal in mind, radioactive photon sources were used to determine the energy resolution and detector response of ATLASPix; these are novel measurements for ATLASPix, a detector built for a ground-based particle accelerator. As part of this project a new iteration of monolithic Si pixels, named AstroPix, have been created based on ATLASPix, and the eventual goal is to further optimize AstroPix for gamma-ray detection by constructing a prototype Compton telescope.The energy resolution of both the digital and analog output of ATLASPix is the focus of this paper, as it is a critical metric for Compton telescopes. It was found that with the analog output of the detector, the energyresolution of a single pixel was 7.69 +/- 0.13% at 5.89 keV and 7.27 +/- 1.18% at 30.1 keV, which exceeds the conservative baseline requirements of 10% resolution at 60 keV and is an encouraging start to an optimistic goal of<2% resolution at 60 keV. The digital output of the entire detector consistently yielded energy resolutions that exceeded 100% for different sources. The analog output of the monolithic silicon pixels indicates that thisis a promising technology for future gamma-ray missions, while the analysis of the digital output points to the need for a redesign of future photon-sensitive monolithic silicon pixel detectors.

preprint2020arXiv

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trapping effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective doping concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.

preprint2020arXiv

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~\text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5~\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.