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Ivan Ovsyannikov

Ivan Ovsyannikov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Classification of Codimension-1 Singular Bifurcations in Low-dimensional DAEs

The study of bifurcations of differential-algebraic equations (DAEs) is the topic of interest for many applied sciences, such as electrical engineering, robotics, etc. While some of them were investigated already, the full classification of such bifurcations has not been done yet. In this paper, we consider bifurcations of quasilinear DAEs with a singularity and provide a full list of all codimension-one bifurcations in lower-dimensional cases. Among others, it includes singularity-induced bifurcations (SIBs), which occur when an equilibrium branch intersects a singular manifold causing certain eigenvalues of the linearized problem to diverge to infinity. For these and other bifurcations, we construct the normal forms, establish the non-degeneracy conditions and give a qualitative description of the dynamics. Also, we study singular homoclinic and heteroclinic bifurcations, which were not considered before.

preprint2019arXiv

Inhomogeneous domain walls in spintronic nanowires

In case of a spin-polarized current, the magnetization dynamics in nanowires are governed by the classical Landau-Lifschitz equation with Gilbert damping term, augmented by a typically non-variational Slonczewski term. Taking axial symmetry into account, we study the existence of domain wall type coherent structure solutions, with focus on one space dimension and spin-polarization, but our results also apply to vanishing spin-torque term. Using methods from bifurcation theory for arbitrary constant applied fields, we prove the existence of domain walls with non-trivial azimuthal profile, referred to as inhomogeneous. We present an apparently new type of domain wall, referred to as non-flat, whose approach of the axial magnetization has a certain oscillatory character. Additionally, we present the leading order mechanism for the parameter selection of flat and non-flat inhomogeneous domain walls for an applied field below a threshold, which depends on anisotropy, damping, and spin-transfer. Moreover, numerical continuation results of all these domain wall solutions are presented.