Researcher profile

Ivan A. Pshenichnyuk

Ivan A. Pshenichnyuk contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Edge-plasmon assisted electro-optical modulator

An efficient electro-optical modulation has been demonstrated here by using an edge plasmon mode specific for the hybrid plasmonic waveguide. Our approach addresses a major obstacle of the integrated microwave photonics caused by the polarization constraints of both active and passive components. In addition to sub-wavelength confinement, typical for surface plasmon polaritons, the edge plasmon modes enable exact matching of the polarization requirements for silicon based input/output grating couplers, waveguides and electro-optical modulators. A concept of the hybrid waveguide, implemented in a sandwich-like structure, implies a coupling of propagating plasmon modes with a waveguide mode. The vertically arranged sandwich includes a thin layer of epsilon-near-zero material (indium tin oxide) providing an efficient modulation at small length scales. Employed edge plasmons possess a mixed polarization state and can be excited with horizontally polarized waveguide modes. It allows the resulting modulator to work directly with efficient grating couplers and avoid using bulky and lossy polarization converters. A 3D optical model based on Maxwell equations combined with drift-diffusion semiconductor equations is developed. Numerically heavy computations involving the optimization of materials and geometry have been performed. Effective modes, stationary state field distribution, an extinction coefficient, optical losses and charge transport properties are computed and analyzed. In addition to the polarization matching, the advantages of the proposed model include the compact planar geometry of the silicon waveguide, reduced active electric resistance R and a relatively simple design, attractive for experimental realization.

preprint2013arXiv

Charge Transport in Pentacene-Graphene Nanojunctions

We investigate charge transport in pentacene-graphene nanojunctions employing density functional theory (DFT) electronic structure calculations and the Landauer transport formalism. The results show that the unique electronic properties of graphene strongly influence the transport in the nanojunctions. In particular, edge states in graphene electrodes with zigzag termination result in additional transport channels close to the Fermi energy which deeply affects the conductance at small bias voltages. Investigating different linker groups as well as chemical substitution, we demonstrate how the transport properties are furthermore influenced by the molecule-lead coupling and the energy level lineup.