Researcher profile

Ivan A. Dmitriev

Ivan A. Dmitriev contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for the CR-inactive geometry. We provide a possible route to explain this fundamental failure of the conventional description of light-matter interaction and discuss a modified electron dynamics near strong impurities that may provide a local near-field coupling of the two helicity modes of the terahertz field at low temperatures. This should result in a CR-enhanced local absorption and, thus, CR photoconductivity for both magnetic field polarities.

preprint2020arXiv

Observation of terahertz-induced magnetooscillations in graphene

When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular momentum conservation. Here we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate the emergence of a pronounced THz-driven photoresponse, which exhibits low-field magnetooscillations governed by the ratio of the frequency of the incoming radiation and the quasiclassical cyclotron frequency. We analyze the modifications of generated photovoltage with the radiation frequency and carrier density and demonstrate that the observed photoresponse shares a common origin with microwave-induced resistance oscillations previously observed in GaAs-based heterostructures, yet in graphene, it appears at much higher frequencies and persists above liquid nitrogen temperatures. Our observations expand the family of radiation-driven phenomena in graphene and offer potential for the development of novel optoelectronic devices.

preprint2019arXiv

Acousto-electric study of microwave-induced current domains

Surface Acoustic Waves (SAW) have been utilized to investigate the properties of a two-dimensional electron system, subjected to a perpendicular magnetic field and monochromatic microwave radiation, in the regime where the so-called microwave-induced zero-resistance states form. Contrary to conventional magneto-transport in Hall bar and van der Pauw geometries, the collimated SAW beam probes only the bulk of the electronic system exposed to this wave. Clear signatures appear in the SAW propagation velocity corroborating that neither contacts, nor sample edges are a root source for their emergence. By virtue of the directional nature of this probing method and with the assistance of theoretical modelling, we were also able to demonstrate that the SAW response depends on the angle between its propagation vector and the orientation of domains which spontaneously form when zero-resistance is observed in transport. This confirms in unprecedented manner the formation of an inhomogeneous phase under these non-equilibrium conditions.