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Researcher profile

Denis A. Bandurin

Denis A. Bandurin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Tuneable spin injection in high-quality graphene with one-dimensional contacts

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tuneable spin signal in fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130,000 cm$^2$V$^{-1}$s$^{-1}$ and spin diffusion lengths approaching 20 $μ$m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of terahertz-induced magnetooscillations in graphene

When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular momentum conservation. Here we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate the emergence of a pronounced THz-driven photoresponse, which exhibits low-field magnetooscillations governed by the ratio of the frequency of the incoming radiation and the quasiclassical cyclotron frequency. We analyze the modifications of generated photovoltage with the radiation frequency and carrier density and demonstrate that the observed photoresponse shares a common origin with microwave-induced resistance oscillations previously observed in GaAs-based heterostructures, yet in graphene, it appears at much higher frequencies and persists above liquid nitrogen temperatures. Our observations expand the family of radiation-driven phenomena in graphene and offer potential for the development of novel optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Singularity-enhanced terahertz detection in high-mobility field-effect transistors

Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite successful proof-of-concept demonstrations, the responsivity of transistor-based detectors of THz radiation, at present, remains fairly poor. To resolve this problem, we propose a class of devices supporting singular plasmon modes, i.e. modes with strong electric fields near keen electrodes. A large plasmon-enhanced electric field results in amplified non-linearities, and thus efficient ac-to-dc conversion. We analyze sub-terahertz detectors based on a two-dimensional electron system (2DES) in the Corbino geometry as a prototypical and exactly solvable model and show that the responsivity scales as $1/r_0^{2}$ with the radius of the inner contact $r_0$. This enables responsivities exceeding 10 kV/W at sub-THz frequencies for nanometer-scale contacts readily accessible by modern nanofabrication techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin hydrodynamic generation in graphene

Graphene hosts an ultra-clean electronic system with electron-electron collisions being the dominant source of scattering above liquid nitrogen temperatures. In this regime, the motion of the electron fluid resembles the flow of classical liquids and gases with high viscosity. Here we show that such a viscous electron flow can cause the generation of a spin current perpendicular to the direction of flow. Combining the Navier-Stokes equations and the spin diffusion equation in the presence of the spin-vorticity coupling, we derive an expression for the spin accumulation emerging purely as a result of the viscous electron flow. We explore Poiseuille flow and Jeffery-Hamel flow and show that the spin Hall angle may exceed 0.1 over a wide range of temperatures and can be controlled by carrier density, temperature, and the geometry of sample boundaries. Our theory points to new functionality of graphene as a spin current source.

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preprint2018arXiv

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

0 citations0 reviewsNo code linkedOpen access