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Isabel Van Driessche

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2 publications

preprint2013arXiv

Aliovalent Doping of CeO2_2: DFT-study of Oxidation State and Vacancy Effects

The modification of the properties of CeO2_2 through aliovalent doping are investigated within the \emph{ab-initio} density functional theory framework. Lattice parameters, dopant atomic radii, bulk moduli and thermal expansion coefficients of fluorite type Ce1−x_{1-x}Mx_{x}O2−y_{2-y} (with M= = Mg, V, Co, Cu, Zn, Nb, Ba, La, Sm, Gd, Yb, and Bi)are presented for dopant concentrations in the range 0.00≤x≤0.250.00 \leq x \leq 0.25. The stability of the dopants is compared and discussed, and the influence of oxygen vacancies is investigated. It is shown that oxygen vacancies tend to increase the lattice parameter, and strongly decrease the bulk modulus. Defect formation energies are correlated with calculated crystal radii and covalent radii of the dopants, but are shown to present no simple trend. The previously observed inverse relation between the thermal expansion coefficient and the bulk modulus is shown to persist independent of the inclusion of charge compensating vacancies.

preprint2013arXiv

Tuning of CeO2_2 buffer layers for coated superconductors through doping

The appearance of microcracks in CeO2_2 buffer layers, as used in buffer layer architectures for coated superconductors, indicates the presence of stress between this buffer layer and the substrate. This stress can originate from the differences in thermal expansion or differences in lattice parameters between the CeO2_2 buffer layer and the substrate. In this article, we study, by means of \textit{ab initio} density functional theory calculations, the influence of group IV doping elements on the lattice parameter and bulk modulus of CeO2_2. Vegard's law behavior is found for the lattice parameter in systems without oxygen vacancies, and the Shannon crystal radii for the doping elements are retrieved from the lattice expansions. We show that the lattice parameter of the doped CeO2_2 can be matched to that of the La2_2Zr2_2O7_7 coated NiW substrate substrate for dopant concentrations of about 5%5\%, and that bulk modulus matching is either not possible or would require extreme doping concentrations.

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