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Iosif Galanakis

Iosif Galanakis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

5 published item(s)

preprint2020arXiv

Ab initio study of the half-metallic full-Heusler compounds Co$_2$ZAl [Z = Sc, Ti, V, Cr, Mn, Fe]; the role of electronic correlations

We study the structural, electronic, and magnetic properties of Co$_2$ZAl compounds employing a pseudopotential electronic bandstructure method. The stability of the compounds is established through the formation and cohesive energy calculations. The effect of the lattice parameter variation on the electronic and magnetic properties of the compounds is investigated and meticulous explanation is provided for the observed behavior. The variation of the individual spin magnetic moments and the stability of the total spin magnetic moment during the expansion and contraction of the lattice parameter is observed and an attempt is made to understand the obtained behavior. Finally, we implement DFT+U to examine its consequences on the electronic and magnetic properties of the Co$_2$ZAl compounds. We find that the use of DFT+U is not justified for these compounds and in some cases like Co$_2$MnAl it produces unrealistic properties. The exception is Co2FeAl where the desired half-metallicity is restored after the inclusion of on-site correlations. We explain why the on-site correlations might be important for Co$_2$FeAl by comparing it with other Heusler alloys where the correlation was found to be meaningful to explain the observed magnetic moments.

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preprint2016arXiv

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study

Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. V$_3$Al in its metastable D0$_3$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Ga and V$_3$In compounds based on state-of-the-art electronic structure calculations. We show that the ground state for all three is a G-type itinerant antiferromagnetic gapless semiconductor. The large antiferromagnetic exchange interactions lead to very high Néel temperatures, which are predicted to be around 1000 K. The coexistence of the gapless and antiferromagnetic behaviors in these compounds can be explained considering the simultaneous presence of three V atoms at the unit cell using arguments which have been employed for usual inverse Heusler compounds. We expect that our study on these compounds to enhance further the interest on them towards the optimization of their growth conditions and their eventual incorporation in devices.

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preprint2015arXiv

Effect of the double-counting functional on the electronic and magnetic properties of half-metallic magnets using the GGA+U method

Methods based on the combination of the usual density functional theory (DFT) codes with the Hubbard models are widely used to investigate the properties of strongly correlated materials. Using first-principle calculations we study the electronic and magnetic properties of 20 half-metallic magnets performing self-consistent GGA+U calculations using both the atomic-limit (AL) and around-mean-field (AMF) functionals for the double counting term, used to subtract the correlation part from the DFT total energy, and compare these results to the usual generalized-gradient-approximation (GGA) calculations. Overall the use of AMF produces results similar to the GGA calculations. On the other hand the effect of AL is diversified depending on the studied material. In general the AL functional produces a stronger tendency towards magnetism leading in some cases to unphysical electronic and magnetic properties. Thus the choice of the adequate double-counting functional is crucial for the results obtained using the GGA+U method.

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preprint2013arXiv

Ab-initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets

Correlation effects play an important role in the electronic structure of half-metallic (HM) magnets. In particular, they give rise to non-quasiparticle states above (or below) the Fermi energy at finite temperatures that reduce the spin polarization and, as a consequence, the efficiency of spintronics devices. Employing the constrained random-phase approximation (cRPA) within the full-potential linearized augmented-plane-wave (FLAPW) method using maximally localized Wannier functions, we calculate the strength of the effective on-site Coulomb interaction (Hubbard $U$ and Hund exchange $J$) between localized electrons in different classes of HM magnets considering: (i) \emph{sp}-electron ferromagnets in rock-salt structure, (ii) zincblende 3\emph{d} binary ferromagnets, as well as (iii) ferromagnetic and ferrimagnetic semi- and full-Heusler compounds.

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