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Inge Leermakers

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2019arXiv

New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures

In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems.

preprint2019arXiv

Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling

The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface.

preprint2016arXiv

Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface state like behavior in the magnetoresistance. The electrons responsible for this pseudo two dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (~ 10^5 %).

preprint2015arXiv

Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP

Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of electrical resistance by an external magnetic field. Weyl semimetal (WSM) is a topological semimetal with massless relativistic electrons as the three-dimensional analogue of graphene and promises exotic transport properties and surface states, which are different from those of the famous topological insulators (TIs). In this letter, we choose to utilize NbP in magneto-transport experiments because its band structure is on assembly of a WSM and a normal semimetal. Such a combination in NbP indeed leads to the observation of remarkable transport properties, an extremely large magnetoresistance of 850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T without any signs of saturation, and ultrahigh carrier mobility of 5$\times$10$^6$ cm$^2$ V$^{-1}$ s$^{-1}$ accompanied by strong Shubnikov-de Hass (SdH) oscillations. NbP presents a unique example to consequent design the functionality of materials by combining the topological and conventional phases.