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Indra Yudhistira

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor

Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics.

preprint2017arXiv

Theory of Coulomb Drag in Spatially Inhomogeneous Materials

Coulomb drag between parallel two-dimensional electronic layers is an excellent tool for the study of electron-electron interactions. In actual experiments, the layers display spatial charge density fluctuations due to imperfections such as external charged impurities. However, at present a systematic way of taking these inhomogeneities into account in drag calculations has been lacking, making the interpretation of experimental data problematic. On the other hand, there exists a highly successful and widely accepted formalism describing transport within single inhomogeneous layers known as effective medium theory. In this work, we generalize the standard effective medium theory to the case of Coulomb drag between two inhomogeneous sheets and demonstrate that inhomogeneity in the layers has a strong impact on drag transport. In the case of exciton condensation between the layers, we show that drag resistivity takes on a value determined by the amplitude of density fluctuation. Next we consider drag between graphene sheets, in which the existence of spatial charge density fluctuations is well-known. We show that these inhomogeneities play a crucial role in explaining existing experimental data. In particular, the temperature dependence of the experimentally observed peaks in drag resistivity can only be explained by taking the layer density fluctuations into account. We also propose a method of extracting information on the correlations between the inhomogeneities of the layers. The effective medium theory of Coulomb drag derived here is general and applies to all two-dimensional materials.

preprint2016arXiv

Spatial Charge Inhomogeneity and Defect States in Topological Dirac Semimetal Thin Films

The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disorder drives fluctuations in EF. Three-dimensional topological Dirac semimetals (TDS)6,7 obviate the substrate, and should show reduced EF fluctuations due to better metallic screening and higher dielectric constants. Here we map the potential fluctuations in TDS Na3Bi using a scanning tunneling microscope. The rms potential fluctuations are significantly smaller than room temperature (ΔEF,rms = 4-6 meV = 40-70 K) and comparable to the highest quality graphene on h-BN;8 far smaller than graphene on SiO2,9,10 or the Dirac surface state of a topological insulator.11 Surface Na vacancies produce a novel resonance close to the Dirac point with surprisingly large spatial extent and provides a unique way to tune the surface density of states in a TDS thin-film material.

preprint2014arXiv

Disorder induced magnetoresistance in a two dimensional electron system

We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality point. Effective medium calculations show that for charged impurity disorder, the low-field MR is a universal function of the ratio of carrier density to fluctuations in carrier density, a power-law when this ratio is large, in excellent agreement with experiment. The MR is generic and should occur in other materials with large carrier density inhomogeneity.

preprint2013arXiv

Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization

A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum Hall effect are also observed for the same sample.