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Iman Taghavi

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Published work

4 published item(s)

preprint2022arXiv

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.

preprint2020arXiv

Large signal analysis of multiple quantum well transistor lasers: Investigation of imbalanced carrier and photon density distribution

In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for carrier transport, nonlinear optical gain and optical confinement factor (OCF), we have simulated the large signal response of the HBTL in relatively low and high modulation frequencies. Our results predict that for multiple quantum well structures at low frequencies there should not be a difference in carrier density either the photon density. However, carrier concentration can be differently distributed between subsequent wells in case of a high speed yet large signal input. This leads to increased linewidth instead as it depends on ΔNqw. We show the effect of different structural parameters on the switching behavior by performing a switching analysis of the Single Quantum Well (SQW) and Multiple Quantum Well (MQW) structures using computationally efficient numerical methods. A set of coupled rate equations is solved to investigate the large-signal and switching behavior of MQW-HBTL. Finally, to have a comprehensive judgment about this optoelectronic device, we introduce a relative performance factor to taking into account all the optoelectronic characteristics such as output power, ac current gain, modulation bandwidth, and base threshold current as well as turn-on time in order to design a suitable TL for Opto-Electronic Integrated Circuits (OEICs).

preprint2016arXiv

Graded index SCH transistor laser: Analysis of various confinement structures

New configuration of confinement structure is utilized to improve optoelectronic performances, including threshold current, AC current gain as well as optical bandwidth and optical output power of single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters including, electron mobility, recombination lifetime, optical confinement factor, electron capture time and photon lifetime is calculated for new structures. Based on solving continuity equation in separate confinement heterostructures, threshold current reduces 67% and optical output power increases 37%.

preprint2012arXiv

Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of \approx 60GHz is achieved in the case of 5 quantum wells each of 70A widths and a cavity length of 200um.