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Ikuma Tateishi

Ikuma Tateishi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

Electronic topological transition of 2D boron by the ion exchange reaction

We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layered crystal of YCrB$_4$ is an insulator ($Z_2=1$). The results demonstrate the electronic topological transition by replacement of the counter atoms on the non-symmorphic borophene layer.

preprint2022arXiv

Quantum spin Hall effect from multi-scale band inversion in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$

Moiré materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moiré-scale structure modulation. Here, we propose twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ as a new Moiré material where the Moiré-scale modulation induces a topological phase transition. We show, in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$, a topological insulator domain and a normal insulator domain coexist in the Moiré lattice structure, and edge states on the domain boundary make nearly flat bands that dominate the material properties. The edge states further contribute to a Moiré-scale band inversion, resulting in Moiré-scale topological states. There are corresponding Moiré-scale edge states and they are so to speak "edge state from edge state", which is a unique feature of twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$. Our result not only proposes novel quantum phases in twisted bilayer Bi$_2$Te$_3$-family, but also suggests the twisting of stacking sensitive topological materials paves an avenue in the search for novel quantum materials and devices.

preprint2021arXiv

Thin Films of Topological Nodal Line Semimetals as a Candidate for Efficient Thermoelectric Converters

Thermoelectric materials intrigue much interest due to their wide range of application such as power generators and refrigerators. The efficiency of thermoelectric materials is quantified by the figure of merit, and a figure greater than unity is desired. To achieve this, a large Seebeck coefficient and low phonon thermal conductivity are required. We show that this can be achieved with a thin film of topological nodal line semimetals. We also discusses the correlation effect and spin current induced by a temperature gradient. The obtained results provide insight for the improvement of thermoelectric materials.