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Igor Bejenari

Igor Bejenari appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

3 published item(s)

preprint2015arXiv

Electron back scattering in CNTFETs

A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The new model comprises an improved description of electron-phonon scattering mechanism taking into account the accumulation of electrons at the bottom of conduction subband due to back scattering by optical phonons. The model has been justified by a Boltzmann transport equation solver. The simulation results are found to be in agreement with experimental data for highly doped CNTFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Thermoelectric properties of electrically gated bismuth telluride nanowires

We theoretically studied the effect of the perpendicular electric field on the thermoelectric properties of the intrinsic, n-type and p-type bismuth telluride nanowires with the growth direction [110]. The electronic structure and the wave functions were calculated by solving self-consistently the system of the Schrodinger and Poisson equations using the spectral method. The Poisson equation was solved in terms of the Newton - Raphson method within the predictor-corrector approach. The electron - electron exchange - correlation interactions were taken into account in our analysis. In the temperature range from 77 to 500 K, the dependences of the Seebeck coefficient, thermal conductivity, electron (hole) concentration, and thermoelectric figure of merit on the nanowire thickness, gate voltage, and excess hole (electron) concentration were investigated in the constant relaxation-time approximation. The results of our calculations indicate that the external perpendicular electric field can increase the Seebeck coefficient of the bismuth telluride nanowires with thicknesses of 7 - 15 nm by nearly a factor of 2 and enhance ZT by an order of magnitude. At room temperature, ZT can reach a value as high as 3.4 under the action of the external perpendicular electric field for realistic widths of the nanowires. The obtain results may open up a completely new way for a drastic enhancement of the thermoelectric figure of merit in a wide temperature range.

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preprint2009arXiv

Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band intensity undergoes severe quenching. The evolution of the ratio of the intensities of the G and 2D peaks, I(G)/I(2D), as the number of graphene layers n changes from n=1 to n=5, is different in UV Raman spectra from that in conventional visible Raman spectra excited at the 488 nm and 633 nm wavelengths. The 2D band under UV excitation shifts to larger wave numbers and is found near 2825 1/cm. The observed UV Raman features of graphene were explained by invoking the resonant scattering model. The obtained results contribute to the Raman nanometrology of graphene by providing an additional metric for determining the number of graphene layers and assessing its quality.

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