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Ian K. Robinson

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Published work

6 published item(s)

preprint2020arXiv

Complete Strain Mapping of Nanosheets of Tantalum Disulfide

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $μ$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.

preprint2020arXiv

Concurrent probing of electron-lattice dephasing induced by photoexcitation in 1T-TaSeTe using ultrafast electron diffraction

It has been technically challenging to concurrently probe the electrons and the lattices in materials during non-equilibrium processes, allowing their correlations to be determined. Here, in a single set of ultrafast electron diffraction patterns taken on the charge-density-wave (CDW) material 1T-TaSeTe, we discover a temporal shift in the diffraction intensity measurements as a function of scattering angle. With the help of dynamic models and theoretical calculations, we show that the ultrafast electrons probe both the valence-electron and lattice dynamic processes, resulting in the temporal shift measurements. Our results demonstrate unambiguously that the CDW is not merely a result of the periodic lattice deformation ever-present in 1T-TaSeTe but has significant electronic origin. This method demonstrates a novel approach for studying many quantum effects that arise from electron-lattice dephasing in molecules and crystals for next-generation devices.

preprint2020arXiv

Vacancy-driven non-cubic local structure and magnetic anisotropy tailoring in Fe$_x$O-Fe$_{3-δ}$O$_4$ nanocrystals

In contrast to bulk materials, nanoscale crystal growth is critically influenced by size- and shape-dependent properties. However, it is challenging to decipher how stoichiometry, in the realm of mixed-valence elements, can act to control physical properties, especially when complex bonding is implicated by short and long-range ordering of structural defects. Here, solution-grown iron-oxide nanocrystals (NCs) of the pilot wustite system are found to convert into iron-deficient rock-salt and ferro-spinel sub-domains, but attain a surprising tetragonally distorted local structure. Cationic vacancies within chemically uniform NCs are portrayed as the parameter to tweak the underlying properties. These lattice imperfections are shown to produce local exchange-anisotropy fields that reinforce the nanoparticles magnetization and overcome the influence of finite-size effects. The concept of atomic-scale defect control in subcritical size NCs, aspires to become a pathway to tailor-made properties with improved performance for hyperthermia heating over defect-free NCs.

preprint2016arXiv

Coherent X-ray measurements of ion-implantation-induced lattice strains in nano-crystals

Focussed Ion Beam (FIB) milling is a mainstay of nano-scale machining. By manipulating a tightly focussed beam of energetic ions, often gallium (Ga+), FIB can sculpt nanostructures via localised sputtering. This ability to cut solid matter on the nano-scale has revolutionised sample preparation across the life-, earth- and materials sciences. For example FIB is central to microchip prototyping, 3D material analysis, targeted electron microscopy sample extraction and the nanotechnology behind size-dependent material properties. Despite its widespread usage, detailed understanding of the functional consequences of FIB-induced structural damage, intrinsic to the technique, remains elusive. Here, we present nano-scale measurements of three-dimensional, FIB-induced lattice strains, probed using Bragg Coherent X-ray Diffraction Imaging (BCDI). We observe that even low gallium ion doses, typical of FIB imaging, cause substantial lattice distortions. At higher doses, extended self-organised defect structures appear, giving rise to stresses far in excess of the bulk yield limit. Combined with detailed numerical calculations, these observations provide fundamental insight into the nature of the damage created and the structural instabilities that lead to a surprisingly inhomogeneous morphology.

preprint2015arXiv

Three-dimensional imaging of dislocation propagation during crystal growth and dissolution

Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical properties to vastly increased rates of crystal growth. Dislocations have therefore been widely studied using traditional techniques such as X-ray diffraction (XRD) and optical imaging. More recently, advances in microscopy have allowed their direct visualization. Atomic force microscopy (AFM) has enabled the 2D study of single dislocations while transmission electron microscopy (TEM), which was initially limited to 2D projections of thin specimens, can now visualize strain fields in 3D with near atomic resolution. However, these techniques can- not offer in situ, 3D imaging of the formation or movement of dislocations during dynamic processes such as crystal growth and dissolution. Here, we describe how Bragg Coherent Diffraction Imaging (BCDI) can be used to visualize in 3D the entire network of dislocations present within an individual crystal. Using calcite (CaCO3) single crystals, we also use BCDI to monitor the propagation of the dislocation network during repeated growth and dissolution cycles, and show how this is intimately linked to the growth and dissolution mechanisms. These investigations demonstrate the potential of BCDI for studying the mechanisms underlying the response of crystalline materials to external stimuli.

preprint2011arXiv

Proximity Effects and Nonequilibrium Superconductivity in Transition-Edge Sensors

We have recently shown that normal-metal/superconductor (N/S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior.1 Here we extend our understanding to include TESs with added noise-mitigating normal-metal structures (N structures). We find TESs with added Au structures also exhibit weak-link behavior as evidenced by exponential temperature dependence of the critical current and Josephson-like oscillations of the critical current with applied magnetic field. We explain our results in terms of an effect converse to the longitudinal proximity effect (LoPE)1, the lateral inverse proximity effect (LaiPE), for which the order parameter in the N/S bilayer is reduced due to the neighboring N structures. Resistance and critical current measurements are presented as a function of temperature and magnetic field taken on square Mo/Au bilayer TESs with lengths ranging from 8 to 130 μm with and without added N structures. We observe the inverse proximity effect on the bilayer over in-plane distances many tens of microns and find the transition shifts to lower temperatures scale approximately as the inverse square of the in- plane N-structure separation distance, without appreciable broadening of the transition width. We also present evidence for nonequilbrium superconductivity and estimate a quasiparticle lifetime of 1.8 \times 10-10 s for the bilayer. The LoPE model is also used to explain the increased conductivity at temperatures above the bilayer's steep resistive transition.