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I. Yang

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Published work

2 published item(s)

preprint2011arXiv

Zero-Bias Anomalies in Narrow Tunnel Junctions in the Quantum Hall Regime

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors $ν> 1$ and a strongly suppressed conductance for $ν< 1$. A transition between the two behaviors is found near $ν\approx 1$. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for $ν< 1$ occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the $n = 0$ Landau levels. The ZBA for $ν> 1$ arises from weak tunneling of quasiparticles between the $n = 1$ edge channels.

preprint2006arXiv

Interaction Effects and Pseudogap in Two-Dimensional Lateral Tunnel Junctions

Tunneling characteristics of a two-dimensional lateral tunnel junction (2DLTJ) are reported. A pseudogap on the order of Coulomb energy is detected in the tunneling density of states (TDOS) when two identical two-dimensional electron systems are laterally separated by a thin energy barrier. The Coulombic pseudogap remains robust well into the quantum Hall regime until it is overshadowed by the cyclotron gap in the TDOS. The pseudogap is modified by in-plane magnetic field, demonstrating a non-trivial effect of in-plane magnetic field on the electron-electron interaction.