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Researcher profile

I. V. Shvets

I. V. Shvets contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2012arXiv

Statistical distribution of the electric field driven switching of the Verwey state in Fe3O4

The insulating state of magnetite (Fe$_{3}$O$_{4}$) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that broadens as temperature is decreased, consistent with trends seen in other systems involving "unpinning" in the presence of disorder. The switching distributions are also modified by an external magnetic field on a scale comparable to that required to reorient the magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Contact effects on transport in magnetite, an archetypal correlated transition metal oxide

Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we investigate the interface properties of Fe$_3$O$_4$ with different metals, with the contact effects providing a window on the physics at work in the correlated oxide. Contact resistances are determined by means of four-terminal electrical measurements as a function of source voltage and temperature. Contact resistances vary systematically with the work function of the electrode metal, $ϕ(M)$, $M=$Cu, Au and Pt, with higher work function yielding lower contact resistance. This trend and the observation that contact resistances are directly proportional to the Fe$_3$O$_4$ resistivity are consistent with modeling the oxide as an effective $p$-type semiconductor with hopping transport. The jumps in contact resistance values at the bias-driven insulator-metal transition have a similar trend with $ϕ$($M$), consistent with the transition mechanism of charge gap closure by electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ferrimagnetism of the magnetoelectric compound Cu$_2$OSeO$_3$ probed by $^{77}$Se NMR

We present a thorough $^{77}$Se NMR study of a single crystal of the magnetoelectric compound Cu$_2$OSeO$_3$. The temperature dependence of the local electronic moments extracted from the NMR data is fully consistent with a magnetic phase transition from the high-T paramagnetic phase to a low-T ferrimagnetic state with 3/4 of the Cu$^{2+}$ ions aligned parallel and 1/4 aligned antiparallel to the applied field of 14.09 T. The transition to this 3up-1down magnetic state is not accompanied by any splitting of the NMR lines or any abrupt modification in their broadening, hence there is no observable reduction of the crystalline symmetry from its high-T cubic \textit{P}2$_1$3 space group. These results are in agreement with high resolution x-ray diffraction and magnetization data on powder samples reported previously by Bos {\it et al.} [Phys. Rev. B, {\bf 78}, 094416 (2008)]. We also develop a mean field theory description of the problem based on a microscopic spin Hamiltonian with one antiferromagnetic ($J_\text{afm}\simeq 68$ K) and one ferromagnetic ($J_\text{fm}\simeq -50$ K) nearest-neighbor exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Interplay of bulk and interface effects in the electric-field driven transition in magnetite

Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the lateral configuration, the channel length is less than 2 $μ$m, and voltage-probe wires $\sim$100 nm in width are directly patterned within the channel. Multilead measurements quantitatively separate the contributions of each electrode interface and the magnetite channel. We demonstrate that on the onset of the transition contact resistances at both source and drain electrodes and the resistance of magnetite channel decrease abruptly. Temperature dependent electrical measurements below the Verwey temperature indicate thermally activated transport over the charge gap. The behavior of the magnetite system at a transition point is consistent with a theoretically predicted transition mechanism of charge gap closure by electric field.

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