Researcher profile

I. S. Mukhin

I. S. Mukhin contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanoparticles are studied using dark-field optical spectroscopy and full-wave electromagnetic simulations.

preprint2015arXiv

Mode selection in InAs quantum dot microdisk lasers using focused ion beam technique

Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam is studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes except for the fundamental radial one is also demonstrated. The comparison of laser spectra measured at 78 K before and after ion beam etching for microdisk of 8 $μ$m in diameter shows a six-fold increase of mode spacing, from 2.5 nm to 15.5 nm, without significant decrease of the dominant mode quality factor. Numerical simulations are in good agreement with experimental results.