Source author record

I. Pletikosić

I. Pletikosić appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

Reconstruction of the Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ Fermi Surface

The effects of structural supermodulation with the period $λ\approx26$ Å\ along the $b$-axis of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ have been observed in photoemission studies from the early days as the presence of diffraction replicas of the intrinsic electronic structure. Although predicted to affect the electronic structure of the Cu-O plane, the influence of supermodulation potential on Cu-O electrons has never been observed in photoemission. In the present study, we clearly see, for the first time, the effects on the Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ electronic structure - we observe a hybridization of the intrinsic bands with the supermodulation replica bands in the form of avoided crossings and a corresponding reconstruction of the Fermi surface. We estimate the hybridization gap, $2Δ_h\sim25$ meV in the slightly underdoped samples. The hybridization weakens with doping and the anti-crossing can no longer be resolved in strongly overdoped samples. In contrast, the shadow replica, shifted by $(π, π)$, is found not to hybridize with the original bands within our detection limits.

preprint2015arXiv

Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.

preprint2014arXiv

Electronic structure basis for the titanic magnetoresistance in WTe$_2$

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.