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I. Hosako

I. Hosako contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el astro-ph.IM

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preprint2013arXiv

Collective excitation of electric dipole on molecular dimer in organic dimer-Mott insulator

The terahertz (THz) response in 10-100 cm^-1 was investigated in an organic dimer-Mott (DM) insulator kappa-(ET)_2Cu_2(CN)_3 that exhibits a relaxor-like dielectric anomaly. 30 cm^-1 band in the optical conductivity was attributable to collective excitation of the intra-dimer electric dipoles which are formed by an electron correlation. We succeeded in observing photoinduced enhancement of this 30 cm^-1 band, reflecting the growth of the electric dipole cluster in the DM phase. Such optical responses in kappa-(ET)_2Cu_2(CN)_3 reflect instability near the boundary between the DM-ferroelectric charge ordered phases.

preprint2013arXiv

Phonon-Spectrum Narrowing Induced by Ultrafast Charge Fluctuation in an Organic Dimer Mott Insulator

We have observed the characteristic temperature dependence of the intermolecular phonon spectrum in the organic dimer Mott insulator kappa-(ET)2Cu2(CN)3 exhibiting a dielectric anomaly at 30 K. The anomalous spectral narrowing of the 55 cm-1 phonon peak at 30 K was analyzed in terms of motional narrowing within the framework of a stationary Gaussian process, i. e., the phonon frequency is modulated by the ultrafast charge fluctuation. The spectral narrowing occurs because the time constant of the correlation time tau_c and the amplitude of the frequency modulation delta satisfy the relation tau_c<delta at 30 K. At temperatures below 30 K, the motional narrowing is disturbed by the increasing of tau_c, near the charge-glass or the short-range order at 6 K. On the other hand, for temperatures above 30 K, the motional narrowing is disturbed by the increase of delta with increasing temperature.

preprint2009arXiv

CSIP - a Novel Photon-Counting Detector Applicable for the SPICA Far-Infrared Instrument

We describe a novel GaAs/AlGaAs double-quantum-well device for the infrared photon detection, called Charge-Sensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal amplification by another QW as a channel with very high gain, which provides us with extremely high responsivity (10^4 -- 10^6 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 um) has an excellent sensitivity; the noise equivalent power (NEP) of 7x10^-19 W/rHz with the quantum efficiency of ~2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of >10^6, low output impedance of 10^3 -- 10^4 Ohms, and relatively high operation temperature (>2K). We discuss possible applications of the CSIP to FIR photon detection covering 35 -- 60 um waveband, which is a gap uncovered with presently available photoconductors.