Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance () of n-type silicon eventually saturates at of its zero-stress value () in accordance with the charge transfer model, in p-type material increases above a predicted limit of without any significant saturation, even at 3 GPa. Calculation of using \textit{ab-initio} density functional theory reveals that neither nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.