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Researcher profile

I. Duchemin

I. Duchemin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phphysics.comp-phphysics.optics

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Published work

8 published item(s)

preprint2016arXiv

Accurate strain measurements in highly strained Ge microbridges

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exploring approximations to the GW self-energy ionic gradients

The accuracy of the many-body perturbation theory GW formalism to calculate electron-phonon coupling matrix elements has been recently demonstrated in the case of a few important systems. However, the related computational costs are high and thus represent strong limitations to its widespread application. In the present study, we explore two less demanding alternatives for the calculation of electron-phonon coupling matrix elements on the many-body perturbation theory level. Namely, we test the accuracy of the static Coulomb-hole plus screened-exchange (COHSEX) approximation and further of the constant screening approach, where variations of the screened Coulomb potential W upon small changes of the atomic positions along the vibrational eigenmodes are neglected. We find this latter approximation to be the most reliable, whereas the static COHSEX ansatz leads to substantial errors. Our conclusions are validated in a few paradigmatic cases: diamond, graphene and the C60 fullerene. These findings open the way for combining the present many-body perturbation approach with efficient linear-response theories.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Metallic behaviour in SOI quantum wells with strong intervalley scattering

The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for val-leytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial "metallic behaviour" in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong interval-ley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering. The prospect of manipulating the valley degree of freedom in materials like AlAs, 1 silicon 2--4 graphene,

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Remote Surface Roughness Scattering in FDSOI devices with high-$κ$/SiO$_2$ gate stacks

We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-$κ$/Metal gate technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Uniaxially stressed germanium with fundamental direct band gap

We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Many-body Green's function study of coumarins for dye-sensitized solar cells

We study within the many-body Green's function $GW$ and Bethe-Salpeter formalisms the excitation energies of several coumarin dyes proposed as an efficient alternative to ruthenium complexes for dye-sensitized solar cells. Due to their internal donor-acceptor structure, these chromophores present low-lying excitations showing a strong intramolecular charge-transfer character. We show that combining $GW$ and Bethe-Salpeter calculations leads to charge-transfer excitation energies and oscillator strengths in excellent agreement with reference range-separated functional studies or coupled-cluster calculations. The present results confirm the ability of this family of approaches to describe accurately Frenkel and charge-transfer photo-excitations in both extended and finite size systems without any system-dependent adjustable parameter, paving the way to the study of dye-sensitized semiconducting surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Short to long-range charge-transfer excitations in the zincbacteriochlorin-bacteriochlorin complex: a Bethe-Salpeter study

We study using the Bethe-Salpeter formalism the excitation energies of the zincbacteriochlorinbacteriochlorin dyad, a paradigmatic photosynthetic complex. In great contrast with standard timedependent density functional theory calculations with (semi)local kernels, charge transfer excitations are correctly located above the intramolecular Q-bands transitions found to be in excellent agreement with experiment. Further, the asymptotic Coulomb behavior towards the true quasiparticle gap for charge transfer excitations at long distance is correctly reproduced, showing that the present scheme allows to study with the same accuracy intramolecular and charge transfer excitations at various spatial range and screening environment without any adjustable parameter.

0 citations0 reviewsNo code linkedOpen access