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Hyeondeok Shin

Hyeondeok Shin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Assessing the accuracy of compound formation energies with quantum Monte Carlo

Accurately predicting the formation energy of a compound, which describes its thermodynamic stability, is a key challenge in materials physics. Here, we employ many-body quantum Monte Carlo (QMC) with single-reference trial functions to compute the formation energy of two electronically disparate compounds, the intermetallic VPt$_2$ and the semiconductor CuI, for which standard density functional theory (DFT) predictions using both the Perdew-Burke Ernzerhof (PBE) and the strongly constrained and appropriately normed (SCAN) density functional approximations deviate markedly from available experimental values. For VPt$_2$, we find an agreement between QMC, SCAN, and PBE0 estimates, which therefore remain in disagreement with the much less exothermic experimental value. For CuI, the QMC result agrees with neither SCAN nor PBE pointing towards DFT exchange-correlation biases, likely related to the localized Cu $3d$ electrons. Compared to the behavior of some density functional approximations within DFT, spin-averaged QMC exhibits a smaller but still appreciable deviation when compared to experiment. The QMC result is slightly improved by incorporating spin-orbit corrections for CuI and solid I$_2$, so that experiment and theory are brought into imperfect but reasonable agreement within about 120~meV/atom.

preprint2022arXiv

The binding of atomic hydrogen on graphene from density functional theory and diffusion Monte Carlo calculations

In this work density functional theory (DFT) and diffusion Monte Carlo (DMC) methods are used to calculate the binding energy of a H atom chemisorbed on the graphene surface. The Perdew-Burke-Ernzerhof (PBE) value of the binding energy is about 20% larger in magnitude than the diffusion Monte Carlo result. The inclusion of exact exchange through the use of the Heyd-Scuseria-Ernzerhof (HSE) functional brings the DFT value of the binding energy closer in line with the DMC result. It is also found that there are significant differences in the charge distributions determined using PBE and DMC approaches.

preprint2020arXiv

Doped NiO: the Mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap.