Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency into quantum wells driven by a ~10 kV/cm field oscillating at THz. At K, up to 18 sidebands are observed at frequencies , with . Electrons and holes recollide with total kinetic energies up to 57 meV, well above the meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above .