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Huili G. Xing

Huili G. Xing appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.supr-con cond-mat.mes-hall physics.app-ph physics.optics

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preprint2022arXiv

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $β$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and that the superconducting critical temperature of phase pure $β$-$\textrm{Nb}_2\textrm{N}$ films is $0.35~K<T_c<0.6~K$, based on measurements of films grown at different substrate temperatures.

preprint2020arXiv

An unexplored MBE growth mode reveals new properties of superconducting NbN

Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.

preprint2020arXiv

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.

preprint2013arXiv

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization.