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Hubert Riedl

Hubert Riedl contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Stimulated generation of indistinguishable single photons from a quantum ladder system

We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultra-low multi-photon errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. Since both control laser fields are detuned from the emission energy, the scheme does not require polarization filtering, facilitating high brightness approaching unity. Moreover, the polarization of the emitted single photons is controlled by the stimulation laser field, such that the polarization of the quantum light is deterministically programmable.

preprint2020arXiv

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and lifts of the degeneracy in dependence of gate bias.