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Huaping Xiao

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astro-ph.HE cond-mat.mes-hall

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preprint2020arXiv

XMM-Newton and NICER measurement of the rms spectrum of the millihertz quasi-periodic oscillations in the neutron-star low-mass X-ray binary 4U 1636-53

We used two XMM-Newton and six Neutron Star Interior Composition Explorer (NICER) observations to investigate the fractional rms amplitude of the millihertz quasi-periodic oscillations (mHz QPOs) in the neutron-star low-mass X-ray binary 4U 1636-53. We studied, for the first time, the fractional rms amplitude of the mHz QPOs vs. energy in 4U 1636-53 down to 0.2 keV. We find that, as the energy increases from 0.2 keV to 3 keV, the rms amplitude of the mHz QPOs increases, different from the decreasing trend that has been previously observed above 3 keV. This finding has not yet been predicted by any current theoretical model, however, it provides an important observational feature to speculate whether a newly discovered mHz oscillation originates from the marginally stable nuclear burning process on the neutron star surface.

preprint2015arXiv

Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers

Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized by strain but the topological gap is induced by SOC. The band gap of monolayer LB HgTe TI phase can be tuned over a wide range from 0 eV to 0.20 eV as the tensile strain increases from 2.6% to 7.4%. Similarly, the topological phase transition of monolayer LB HgSe is induced by strain and SOC as the strain ε >3.1%. The topological band gap can be 0.05 eV as the strain increases to about 4.6%. The large band gap of 2D LB HgTe and HgSe monolayers make this type of material suitable for practical applications at room-temperature.